Electron diffusion in trap-contained 3D porous nanostructure: simulation and experimental investigation

Abdi, Naser; Abdi, Yaser; Oskoee, Ehsan Nedaaee; Sajedi, Maryam

doi:10.1007/s11051-014-2308-3

Cited by 9 publications

(10 citation statements)

References 22 publications

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“…The model implies that particles change their positions stepwise at random time instants. The time intervals between jumps (waiting times) are independent, equally dis tributed random variables θ with the broad power law distribution (1) The integral equation of the continuous time ran dom walk model for the distribution density p(x, t) of…”

Section: Mixture Of Waiting Time Distributionsmentioning

confidence: 99%

“…The problem of electron transport in nanostruc tured materials is important both theoretically and technologically [1,2]. In most cases, these materials are disordered structures where the kinetics of charge carriers (electrons, holes, and ions) is often anomalous and cannot be described within the standard diffusion approach [3][4][5][6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…(for more details, see [3,6,14]). The necessity of allow ance for the morphology of a nanostructured, in par ticular, nanoporous material remains topical when describing electron transport, e.g., in dye sensitized solar cells [1,2]. The possibility of the joint action of several transport mechanisms should also be taken into account.…”

Section: Introductionmentioning

confidence: 99%

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Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

Sibatov

Morozova²

2015

J. Exp. Theor. Phys.

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A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed new model in order to analyze time of flight exper iments for nanostructured semiconductors.

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Section: Mixture Of Waiting Time Distributionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

Sibatov

Morozova²

2015

J. Exp. Theor. Phys.

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“…In the previous works (Anta and Morales-Flórez, 2008;Abdi et al, 2014;Ansari-Rad et al, 2012;Cass et al, 2003Cass et al, , 2005Bisquert, 2004;Tessler et al, 2009) dependency of the chemical diffusion coefficient on the morphological parameters was reported. The main advantage of this work is obtaining the porosity/surface roughness dependent equations for the chemical diffusion coefficient.…”

Section: Introductionmentioning

confidence: 98%

“…Experimental investigations show that the electrical characteristics of the cells depend on the morphological parameters (Kopidakis et al, 2005;Nakade et al, 2003). Monte-Carlo random walk (MCRW) simulations was recently used to study electron transport in porous media (Anta and Morales-Flórez, 2008;Abdi et al, 2014;Ansari-Rad et al, 2012). Cass et al (2003Cass et al ( , 2005 have studied the effect of the electrical connectivity between the nanoparticles on the transport properties of the electrons.…”

Section: Introductionmentioning

confidence: 99%

Chemical diffusion coefficient in dye sensitized solar cells as a function of porosity and surface roughness

Abdi

Alemipour

et al. 2016

Solar Energy

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a b s t r a c tIn this work we introduce equations describing the morphological dependency of electron transport in nano-structured solar cells. Using the hopping model for electron transport and using the trap contained diffusion model we define an expression to explain the dependency of the electron diffusion coefficient and conductance versus porosity and surface roughness. Validity of the obtained theoretical formula is examined by a random walk simulation based on hopping model in a fully disordered medium with a random distribution of energy. A Monte-Carlo random walk simulation was used to investigate the effects of morphology on the electron transport in the porous nano-structures. For generation of the random packing of nanoparticles, a stochastic cluster model was utilized. The porosity and surface roughness of the generated porous media were tuned by changing the particle size and the overlap parameters.

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Kinetic Monte Carlo simulation of single-electron multiple-trapping transport in disordered media

Javadi

Abdi

2017

Computer Physics Communications

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Electron diffusion in trap-contained 3D porous nanostructure: simulation and experimental investigation

Cited by 9 publications

References 22 publications

Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

Chemical diffusion coefficient in dye sensitized solar cells as a function of porosity and surface roughness

Kinetic Monte Carlo simulation of single-electron multiple-trapping transport in disordered media

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