Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by Sputtering

Abstract

The soft x-ray absorption and magnetic circular dichroism spectra at the Co L 2,3 -edges of [Co/Pd] 20 and [CoB/Pd] 20 multilayered films, which were sputter-deposited in Ar gas containing N 2 at room temperature, were measured to investigate the electronic and spin states of the films. The macroscopic magnetic properties, such as coercivity and saturation magnetization, and microstructural properties, such as grain size and preferred orientation, were markedly changed for the [Co/Pd] 20 film by the B doping and N 2 addition. The B doping and/or the addition of N 2 gas caused appreciable changes not only in macroscopic magnetic properties but also in microscopic properties, such as the spin angular momentum and orbital angular momentum, throughout the multilayered film. On the other hand, a new spectral feature at the high energy side of the Co L 3 -edge peak in x-ray absorption spectra was found in only the films with N 2 added. Thus, the microscopic properties, such as electronic and spin states, of the Co 3d electronic state for the [Co/Pd] 20 and [CoB/Pd] 20 films were changed by only the sputtering process with additive N 2 gas.

Tantalum and tantalum nitride films deposited by electron cyclotron resonance sputtering as barriers to copper diffusion

“…3 The deposition thickness and step coverage were not very uniform because the substrate was normal to the target center axis, as shown in Fig. 2.…”

“…1 Methods using electron cyclotron resonance ͑ECR͒ plasma are very useful for low-temperature deposition of high-melting-point materials such as SiO 2 and Si 3 N 4 in chemical vapor deposition ͑CVD͒ and Ta 2 O 5 and Al 2 O 3 in sputter deposition. 2,3 To extend these deposition methods to conductive films, an ECR plasma source coupled with divided microwaves has been reported. 4 It was shown 4 that the plasma source was stable over long periods of metal deposition and that gold-colored TiN was deposited at low temperature and low N 2 partial pressure.…”

Plasma deposition of constrained layer damping coatings

“…5). The idea of using ECR plasma reactor for sputter deposition purposes dates back to the work of Ono et al [21]. The novelty of the current configuration is a hollow cathode circular target that radiates little heat as it does not face the substrate and has direct water cooling.…”

Tantalum film for x-ray lithography mask deposited by electron cyclotron resonance plasma source coupled with divided microwaves

“…In addition, ECR plasma deposition with a sputtering-material supply ͑ECR sputter deposition͒ is very useful for depositing dielectric films, such as metal oxides and metal nitrides. [3][4][5][6] To extend these features to conductive film deposition, we have developed an ECR plasma source that has a microwave divider, a composer, and quartz windows placed far away from the plasma. 7,8 Tantalum film prepared by rf sputtering has been used as an x-ray absorber 9,10 in x-ray lithography, which is considered to be the most promising technology for 100 nm pattern fabrication.…”