Electron correlations and charge segregation in layered manganese pnictide antiferromagnets showing anomalously large magnetoresistance

Magnetic-field-induced Anderson localization in orbital selective antiferromagnet BaMn$_2$Bi$_2$

“…1(d), the insulating behavior of BaMn 2 Bi 2 is effectively suppressed by H ab 's. Meanwhile, magnetic fields parallel to the AF axis (H c ) result in a much smaller effect [9][10][11]. Our analyses of Hall effects revealed a clear delocalization effect of H ab , as the carrier mobility µ is strongly enhanced, whereas the carrier number is unaffected [16].…”

“…Our model compound is single crystalline BaMn 2 Bi 2 [Fig. 1(a)], the end-member in the family of half-filled G-type AF BaMn 2 Pn 2 's (Pn stands for As, Sb, and Bi) [9][10][11]. In these materials, structurally similar to their sister BaFe 2 As 2 with a 3d 6 electronic shell [7], five 3d orbitals are essential to the electronic properties.…”