2012
DOI: 10.1002/pssa.201100791
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Electron correlation and many‐body effects at interfaces on semiconducting substrates

Abstract: Low dimensional systems are characterized by at least one spatial dimension of only some atoms. Such size reduction has often important consequences for physical properties. Electronic correlation and electron–phonon coupling can originate Mott insulators or charge density waves (CDWs), both phenomena enhanced by dimensionality reduction. Interfaces offer a natural way of reducing the dimensionality. Among all the surfaces, semiconducting surfaces are particularly well adapted for electronic correlation studie… Show more

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Cited by 16 publications
(16 citation statements)
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“…Over the past few decades, the observations of both structural and electronic transitions in a number of metal/semiconductor surfaces have renewed interest in the phase transitions in reduced dimensions [1][2][3][4][5][6][7][8]. A study of the phase transitions at the surfaces has fundamental importance in understanding novel physics, which is richer than in the bulk, because of the enhanced electronic correlation and electron-phonon coupling [9]. A Si(111)-In surface composed of an array of indium atomic chains is a prototypical example undergoing a symmetry-breaking (4 × 1-to-8 × 2) structural phase transition, accompanied by a metalinsulator transition at approximately 120-130 K [3].…”
Section: Introductionmentioning
confidence: 99%
“…Over the past few decades, the observations of both structural and electronic transitions in a number of metal/semiconductor surfaces have renewed interest in the phase transitions in reduced dimensions [1][2][3][4][5][6][7][8]. A study of the phase transitions at the surfaces has fundamental importance in understanding novel physics, which is richer than in the bulk, because of the enhanced electronic correlation and electron-phonon coupling [9]. A Si(111)-In surface composed of an array of indium atomic chains is a prototypical example undergoing a symmetry-breaking (4 × 1-to-8 × 2) structural phase transition, accompanied by a metalinsulator transition at approximately 120-130 K [3].…”
Section: Introductionmentioning
confidence: 99%
“…One speculative possibility is that the D 2 defect is a time-averaged structure of the fluctuating D a between D a,L and D a,R (i.e., I e1 and I e2 in figure 5). 5 This temperature corresponds to the T c of the Si(111)-In surface with 1.0 L of oxygen, which is higher by about 7 K compared with the T c of the pristine surface determined in the similar procedure. This confirms the previously reported increase of the T c due to the O adsorption [26].…”
Section: Resultsmentioning
confidence: 81%
“…As the temperature decreased, the 8 × 2-LT area showed an abrupt increase occurring at approximately 133 K (which is higher than the T 125 c = K of pristine In wire), where the condensation of 2D CDW began 5 . The number of D a defects also increased at the expense of D 2 defects, whereas the total number of D a and D 2 V (filled state).…”
Section: Resultsmentioning
confidence: 92%
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“…Metallic overlayers on semiconductor surfaces are prone to phase transitions [1][2][3], and many exotic phenomena have been found in these two dimensional systems, such as low-dimensional superconductivity [4,5], magnetic orderings [6,7], and metal-insulator transitions [8][9][10][11][12][13][14][15][16][17]. In temperature-induced transitions, very often the dynamical fluctuation of surface atoms is associated with changes of the structural and/or electronic properties of the system.…”
mentioning
confidence: 99%