Abstract:When SOI-PMOS functions like a capacitor-less 1T-DRAM cell, it is possible for the number of electrons to be sensed at cryogenic temperatures (5 K). We developed a structure that combines SOI-NMOS and SOI-PMOS with multiple gates to form a silicon quantum-dot array. In this structure, a variable number of electrons is injected into the SOI-PMOS body by means of the bucket-brigade operation of SOI-NMOS connected in series. The channel-hole current was changed by the injected electrons due to the body bias effec… Show more
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