Electron Charge Noise Minimization in 130 nm CMOS Preamplifiers

Abstract

In this paper we present the design aspects for low-power, low-noise CMOS charge sensitive preamplifier that uses a leakage current compensation circuit for use with radiation sensors. The preamplifier has unipolar response with the peaking time of about 45 ns and the gain about 115-145 mV/ke. Equivalent noise charge (ENC) is less than 80 e, when the input charge is 1-20 ke and the sensors capacitance is equal to 30 fF. In this work we present the quality function of the charge sensitive preamplifier, which characterizes best the optimal input transistor width W , with respect to equivalent noise charge and to the power consumptions.

The Design Aspects for Ultra Low-Power, Low-Noise 90 nm CMOS Charge Sensitive Amplifier for the Active Pixel Detector

“…The amplifier design is critical since it should match the detector interface. The front--end chips are fabricated in state-of-the-art industrial silicon CMOS or GaAs MESFET processes [3,4]. This allows more logic to be introduced into a pixel or the use of a smaller pixel size.…”