Electron Bombarded Semiconductor Image Sensors

Aebi, Verle W.; Costello, Kenneth A.

doi:10.1007/978-3-642-18443-7_4

Cited by 5 publications

(6 citation statements)

References 21 publications

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“…One such gain architecture is the patented electron bombarded active pixel sensor (EBAPS) from EOTECH (formerly Intevac Photonics). [10][11][12] The principle of EBAPS operation is that a GaAs photocathode absorbs incoming photons, which then accelerate through high voltage to a CMOS anode, generating a photocurrent for amplification prior to readout. The drawback of this photoemissive scheme is that excess noise-i.e., multiplicative noise arising from uncertainty in the electron multiplying process-becomes significant due to electron scattering within the multiplication layer, 13 effectively acting as a shot-noise multiplier.…”

Section: Introductionmentioning

confidence: 99%

“…One such gain architecture is the patented electron bombarded active pixel sensor (EBAPS) from EOTECH (formerly Intevac Photonics) 10 – 12 The principle of EBAPS operation is that a GaAs photocathode absorbs incoming photons, which then accelerate through high voltage to a CMOS anode, generating a photocurrent for amplification prior to readout.…”

Section: Introductionmentioning

confidence: 99%

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Performance benefits of charge-domain gain in active shortwave infrared targeting

Burrell,

Follansbee,

Furxhi

et al. 2024

Opt. Eng.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Performance benefits of charge-domain gain in active shortwave infrared targeting

Burrell,

Follansbee,

Furxhi

et al. 2024

Opt. Eng.

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“…Electron bombarded CMOS (EBCMOS) is a new type of low-light-level camera sensor technology, from which the image information can be digitally read out [1]. Compared with intensified CCDs (ICCDs), EBCMOS has attracted much attention owing to its advantages of reduced sensor size and weight, increased sensitivity and dynamic range, faster response time, and better contrast and resolution [2].…”

Section: Introductionmentioning

confidence: 99%

“…EBCMOS sensors were first developed for night vision devices in the military [1], [3]. Except for low-light-level imaging, EBCMOS cameras could also be useful in fluorescence microscopy, astronomy, high energy-physics, bioluminescence data acquisition and medical imaging [4]- [7].…”

Section: Introductionmentioning

confidence: 99%

Characterising Backscattered Electrons in EBCMOS

Wang

Jiao³

et al. 2022

IEEE Photonics J.

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The characteristics of backscattered electrons near the surface of a back-side bombarded CMOS (BSB-CMOS) within an electron bombarded CMOS (EBCMOS) were studied based on the principle of electron-solid interactions and Monte-Carlo simulation method. We mainly focused on the angular distributions of backscattered electrons, the ratio of backscattered electron number to incident electron number (RBI), and the distribution of the distance between backscattered electrons and incident electrons (DBI). We studied how these characteristics were affected by the BSB-CMOS surface structure and incident electron energy. Firstly, RBI and the mean DBI vary with the incident electron energy, the surface material type, and passivation layer thickness. Meanwhile, a lower RBI may reduce device noise originating from backscattered electrons (NBE) due to the smaller number of backscattered electrons. Besides, the lower mean DBI may enhance the device resolution, because the backscattered electron beam is more concentrated. The distribution of backscattered azimuths (ΦB) and the backscattered angle (θB) follow uniform distribution and cosine angular distribution respectively, which are difficult to change. Finally, devices with the lowest RBI and a low mean value of DBI were achieved when the BSB-CMOS surface was modified with 60 nm Al2O3 and the incident electrons were at 4 keV, which might improve the NBE and resolution of the EBCMOS. This study will provide a theoretical foundation for the fabrication of high-resolution EBCMOS.

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“…The electrons emitted by the photocathode are directly injected in the electron bombarded mode into the CMOS anode, where the electrons are collected, amplified, and read-out of the CMOS sensor [10]. However, the EB-CMOS sensor is patented [11,12], under export control, and subjected to the United States' International Traffic in Arms Regulations. The restricted availability causes a significant demand for alternative SWIR-GV sensor systems.…”

Section: Introductionmentioning

confidence: 99%

InGaAs APD matrix sensors for SWIR gated viewing

Rutz

Aidam

Heussen

et al. 2019

Advanced Optical Technologies

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Short-wavelength infrared (SWIR) detection systems are increasingly in demand for surveillance, reconnaissance, and remote sensing applications. Eye-safe SWIR lasers can be utilized for active imaging systems with high image contrast and long detection range. The gated-viewing (GV) technique using short-pulse lasers and fast-gated cameras in the nanosecond range enables utilizing the distance information in addition to the signal intensity of the acquired images. The InGaAs material system is very well suited for the fabrication of high-performance SWIR photodetectors providing a typical cutoff wavelength of 1.7 μm, which covers the emission lines of available laser sources at typical telecom wavelengths around 1.55 μm. However, the usually short integration times needed for GV leads to very small photosignals. We report on the development of SWIR avalanche photodetector (APD) arrays with 640 × 512 pixels and 15 μm pixel pitch based on the InGaAs material system. The InGaAs-APD focal plane arrays have been successfully integrated into SWIR cameras which yield gain values of M ≈ 10 on camera level at a reverse bias voltage around 21 V and are the first InGaAs-based SWIR cameras worldwide providing a 640 × 512 image format and utilizing avalanche gain for signal amplification. The camera performance is demonstrated by SWIR laser GV sample images.

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Electron Bombarded Semiconductor Image Sensors

Cited by 5 publications

References 21 publications

Performance benefits of charge-domain gain in active shortwave infrared targeting

Performance benefits of charge-domain gain in active shortwave infrared targeting

Characterising Backscattered Electrons in EBCMOS

InGaAs APD matrix sensors for SWIR gated viewing

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