Electron Beam Testing

Sample tilting technique for preventing electrostatic discharge during high-current FIB gas-assisted etching with XeF2

“…SE emission itself promotes positive charging of a sample surface during FIB processing. However, when the irradiated area becomes positively charged and a retarding field for SE emission forms above the irradiated area, this retarding field induces the return of low-energy SEs to the surface [16]. From simulation results concerning the critical energy of SEs returning to the surface [17,18], trajectories of SEs emitted from a positively charged region can be classified as follows: (i) SEs whose energy is lower than the potential V p of the charged region are redistributed within the charged region, (ii) SEs whose energy is higher than V p are redistributed to the periphery or fly away from the surface.…”

Intersection of separatrices and the non-integrability of multidimensional systems

“…This is caused by the variation of the dynamic This wafer bias dependence is explained by the well-known voltage contrast generation model resulting from the variation of collection efficiency of secondary electrons with a detector. 6,7) Using the model, the contrast is determined only by the potential barrier V B , V B = V s − φ m , in which V s is the surface potential of a via and is equal to the wafer bias, and φ m is the saddle point of the potential due to the surrounding SiO 2 surface potential. In this experiment, the potential barrier of φ m is estimated to be about +5 V. The potential barrier is determined by the balance between the via potential and the surrounding SiO 2 surface potential.…”

Negative charging-up contrast formation of multilayered structures with a nonpenetrating electron beam in scanning-electron microscope

“…9,10 It is well known that SEM images with abnormal contrast appear in the extremely strong negative charging-up condition. This method's imaging mechanism is now well established.…”

“…9 Using this model, the image contrast of two typical examples is discussed. Our model consists of redistribution of secondary electrons and contribution of a͒ Author to whom correspondence should be addressed: electronic mail: miyoshi@su.rcast.u-tokyo.ac.jp tertiary electrons, whereas the detecting condition of secondary electrons is not considered.…”