Electron-beam-stimulated Atomic Migration Processes in Single-layer MoTe₂

Abstract

This is an Accepted Manuscript for the Microscopy and Microanalysis 2020 Proceedings. This version may be subject to change during the production process.

Phase transformations in single-layer MoTe2 stimulated by electron irradiation and annealing

“…Figure2(a) shows a colour coated 60 kV Cc/Cs-corrected HRTEM image of single-layer H-MoTe 2 . As for MoS 2[55] and MoSe 2[47], continuous electron irradiation leads to the formation of defects in single-layer H-MoTe 2[40]. Similar to the previous study carried out at 40 kV[39], electron-beamdriven structure evolution in single-layer MoTe 2 starts at 60 kV and 80 kV with the formation of isolated single (V Te ) and double tellurium vacancies (V 2Te ).…”

“…In addition, the ratio between Mo and Te in the atomically thin TMD layer can be controlled by the electrons of the TEM [36,37]. Elastic (knock-on) or inelastic (radiolysis) channels of damage formation, along with their combination [38], cause a deficiency of chalcogenide atoms in MoTe 2 , which leads to the in situ formation of isolated defects with a variety of different properties [39][40][41]. Thus, a high concentration of Mo atoms in the atomically thin layer can form 4|4P mirror twin boundaries (MTBs) [39,[42][43][44].…”

“…Our previous works [40,47] have laid the foundation for understanding the electron-specimen interaction in singlelayer MoTe 2 . However, questions remain, such as: (i) how does the rate of Te atom sputtering change under electrons with different energies?…”