2004
DOI: 10.1116/1.1761266
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Electron-beam induced initial growth of platinum films using Pt(PF3)4

Abstract: Electron beam induced deposition of low resistivity platinum from Pt ( P F 3 ) 4 a)In situ electron-beam lithography on GaAs substrates using a metal alkoxide resist Using an organometallic precursor, tetrakis͑trifluorophosphine͒platinum ͓Pt͑PF 3 ) 4 ], electron-beam induced deposition of Pt thin films on a Cr-coated Si͑100͒ substrate was investigated. Based on Auger electron spectroscopy, the Pt content reached 60 at. % for a 3 kV e-beam flux of 2.1 ϫ10 Ϫ2 A cm Ϫ2 , a precursor pressure of 2ϫ10 Ϫ5 Torr, and a… Show more

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Cited by 51 publications
(54 citation statements)
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“…This is the reason why deposits can be created from Pt(PF 3 ) 4 that contain only Pt and P atoms. 11,14,22 In addition to the effect that substrate temperature has on film composition, our results show that the binding energy of platinum atoms in the Pt(4f) region decreases systematically as the substrate temperature increases above 0 C [Figs. 2 and 5(c)], an effect which is consistent with an increase in metallic character.…”
Section: W(co)mentioning
confidence: 94%
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“…This is the reason why deposits can be created from Pt(PF 3 ) 4 that contain only Pt and P atoms. 11,14,22 In addition to the effect that substrate temperature has on film composition, our results show that the binding energy of platinum atoms in the Pt(4f) region decreases systematically as the substrate temperature increases above 0 C [Figs. 2 and 5(c)], an effect which is consistent with an increase in metallic character.…”
Section: W(co)mentioning
confidence: 94%
“…% at 80 C). In another example, Wang et al showed that for EBID films created from Pt(PF 3 ) 4 in an Auger electron spectrometer the (Pt/PtþP) atomic percent increased systematically as the substrate temperature increased from 25 C to 120 C. 14 More recently, Mulders et al performed a systematic temperature dependent study on a range of EBID precursors: W(CO) 6 , TEOS, MeCpPtMe 3 , Co(CO) 3 NO, Co 2 (CO) 8 , and Me 2 Au(acac). This study revealed that increases in metallic content can occur when the substrate temperature was increased, although the importance of this processing variable depended on the precursor.…”
Section: Introductionmentioning
confidence: 99%
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“…The effect of substrate heating is very strong for the Au and Pt precursors. Wang et al 62 suggested that the higher metal content at higher temperatures in their experiments is the result of the increased desorption of volatile groups. While electrons usually only affect the P-F bond ͑see also Sec.…”
Section: Substrate Heatingmentioning
confidence: 98%
“…10,22,[33][34][35][36][37][38] Substrate annealing during deposition decreases the residence time for both the adsorbed precursors and the volatile products of dissociation, and also effectively increases the purity of deposits formed by FEBIP. [39][40][41] Postdeposition annealing, either in situ or in the presence of a reactive species, can also result in increased deposition purity. [42][43][44][45][46] However, annealing strategies can result in physical deformation of the deposited structure, nullifying the advantages of using FEBIP to create well-defined structures with nanometer scale resolution.…”
Section: mentioning
confidence: 99%