Electron-beam-induced deposition using a subnanometer-sized probe of high-energy electrons

Mitsuishi, Kazutaka; Shimojo, Makoto; Han, Ming; Furuya, Kazuo

doi:10.1063/1.1611274

Cited by 119 publications

(87 citation statements)

References 14 publications

(6 reference statements)

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“…Tungsten hexacarbonyl (W(CO) 6 ) powder was used as a precursor, of which the vapor pressure is approximately 2 Pa at room temperature. The precursor has been proved to be suitable for fabricating nano-sized structures on conductive substrates 1,3,5,7) as well as on insulator substrates 9,10) with EBID. Crystalline SiO 2 thinfilm specimens suitable for TEM observation were used as substrates.…”

Section: Methodsmentioning

confidence: 99%

“…Due to the controllability of the beam, zero, one, two, or three dimensional small-sized objects have been fabricated. [1][2][3][4][5][6][7][8] Conductive substrates are generally used in these fabrications, because they provide stable fabrication conditions. Recently, by using insulator substrates, Al 2 O 3 , nanometer-sized (nano-sized) tungstenstructures (W-structures), namely, wire-like, dendrite-like and tree-like W-structures, have been fabricated with EBID using a precursor W(CO) 6 in a 200 kV transmission electron microscope.…”

Section: Introductionmentioning

confidence: 99%

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Fabrication of Free-Standing Tungsten-Nanowhiskers on SiO<SUB>2</SUB> Substrates with Electron-Beam Induced Deposition

2007

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Free-standing tungsten-nanowhiskers about 3 nm in thickness were fabricated on SiO 2 substrates with electron-beam induced deposition in a transmission electron microscope operated at 400 kV at room temperature. The growth process of the nanowhisker was observed in-situ and analyzed. The nanowhisker was characterized with high-resolution transmission electron microscopy. Nucleus-deposits smaller than 1 nm formed on the surface of the substrate, grew to 2$3 nm and then grew out of the surface to form nanowhiskers under the electron irradiation. The nanowhisker grew long at its tip. The density and growth rate of the nanowhiskers were different at different places of the same substrate. A part of the nanowhiskers grew long to about 20 nm at the electron dose of 1:16 Â 10 25 e m À2 for an irradiation time of 223 s. The nanowhisker contained nanometer-sized grains of body-centred cubic structural tungsten and an amorphous part. It was found that there exists a critical size about 2-3 nm for a nucleus to grow to a nanowhisker. It is suggested that the nucleation site of the nanowhisker may be controlled by putting appropriate conductive particles in the critical size on the surface of an insulator substrate.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Fabrication of Free-Standing Tungsten-Nanowhiskers on SiO<SUB>2</SUB> Substrates with Electron-Beam Induced Deposition

2007

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“…A variety of nanometer-sized structures have been fabricated [1][2][3]. Due to stable fabrication, electric conductive substrates are generally used [3] and compact structures are usually fabricated.…”

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confidence: 99%

Transmission Electron Microscopy of Metal Nanodendrites Grown on Insulator Substrates by Electron-Beam-Induced Deposition

Xie

Song

Mitsuishi

et al. 2005

MAM

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Electron-beam-induced deposition (EBID) is one of the most promising techniques to fabricate small-sized structures on substrates. A variety of nanometer-sized structures have been fabricated [1][2][3]. Due to stable fabrication, electric conductive substrates are generally used [3] and compact structures are usually fabricated. On the other hand, little attention has been paid for the nanofabrication with insulator substrates. In the present study, metal (W, Pt) nanodendrites were fabricated on insulator substrates using an EBID process in transmission electron microscopes (TEMs). The as-fabricated microstructure was investigated in detail using conventional and highresolution TEM (CTEM and HRTEM) and X-ray energy dispersive spectroscopy (EDS).For the fabrication of W-nanodendrites, EBID was carried out in a JEM-ARM 1000 TEM. Accelerating voltages were 400, 600, 800, and 1000 kV. A gas introduction system including a nozzle and a reservoir of W(CO) 6 precursor was installed on this microscope. The nozzle was located near specimen within 2 mm. The inner diameter of the nozzle was smaller than 100µm. Crystalline SiO 2 TEM thin films were used as substrate. The fabrication of Pt-nanodendrites were carried out on crystalline Al 2 O 3 substrates. Me 3 MeCpPt powder was a precursor. EBID experiments were done with a JEM-2010F TEM operated at 200 kV. All the experiments were carried out at room temperature. (Fig. 1a). They are grown self-standing at positions separated from each other in distance of several nanometers. Branches are observed at tips, which thickness is less than 3 nm (Fig. 1b). The diameter become thicker near the substrate, which imples that the deposition takes place at both tip and trunk part. This growth and morphology are attributed to a mechanism involving electric charge-up produced and accumulated on the surface of the substrate and tips of the deposits [4]. It is confirmed by EDS that W has been effectively deposited. Further characterization for the as-fabricated dendrites with HRTEM reveals that nano-sized W grains in bcc structure are contained in the dendrites. Fig. 2 shows HRTEM images of some branches of W-dendrites fabricated with various accelerating voltages. Lattice fringes, which are observed at the most places, indicates the formation of nano-sized crystals. The typical lattice spacing measured from images is 0.22 nm which is close to the lattice spacing, 0.224 nm, of {110} of bcc W crystals. Moreover, the inter-fringe angles of 60 degrees (grain A) and 90 degrees (grain B) agree well with the zone axis of [111] and [001] of bcc W structure, respectively. Furthermore, some lattice fringes shown by arrows in Fig. 2a are not clear because of the co-existence of amorphous state. Fig. 2b shows an image of W-dendrites grown at 1000 kV. Lattice fringes are clearly observed in almost all of the grains. The results indicated that the crystallinity of the dendrites was improved as increase in accelerating voltage. High-energy electron irradiation may enhance the diffusion of W atoms in th...

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“…Still, although CVD deposits are often more pure, the advantage of using the FIB system it its ability for precise, localized deposition, and its capacity for controlling the different heights of the depositions. Even so, the use of ion beams may not always be ideal; research has shown that in certain cases, electron nanofabrication has been able to match the work of the ion beam without the impurities that come along with using the FIB [9].…”

Section: Depositionmentioning

confidence: 99%

“…We look into the ever advancing field of integrated circuits and discuss how the FIB can be used for defect analysis as well as structure modification. We also consider 9. Focused Ion Beam System-a Multifunctional Tool for Nanotechnology 249…”

mentioning

confidence: 99%

Focused Ion Beam System—a Multifunctional Tool for Nanotechnology

Yao

Handbook of Microscopy for Nanotechnology

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Electron-beam-induced deposition using a subnanometer-sized probe of high-energy electrons

Cited by 119 publications

References 14 publications

Fabrication of Free-Standing Tungsten-Nanowhiskers on SiO<SUB>2</SUB> Substrates with Electron-Beam Induced Deposition

Fabrication of Free-Standing Tungsten-Nanowhiskers on SiO<SUB>2</SUB> Substrates with Electron-Beam Induced Deposition

Transmission Electron Microscopy of Metal Nanodendrites Grown on Insulator Substrates by Electron-Beam-Induced Deposition

Focused Ion Beam System—a Multifunctional Tool for Nanotechnology

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