Electron beam induced current studies on a photoconductor made of partially compensated GaAs

Abstract

Photoconductors made of partially compensated GaAs are studied by EBIC. A greater‐than‐unity charge collection efficiency is identified and attributed to the photoconductive gain. An exponential dependence of EBIC current on position is found, and a significant sensitivity beneath the contact areas is detected. Some peculiarities are pointed out.