Electron beam-formed ferromagnetic defects on MoS2 surface along 1 T phase transition

Abstract

1 T phase incorporation into 2H-MoS2 via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS2 surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS2 surface provides suitable ways for the low-dimensional device applications.

Defect induced ferromagnetic ordering and room temperature negative magnetoresistance in MoTeP

“…The defect produced moment is close to the magnetic moment calculated for other MoX 2 compounds 18 . Interestingly, incorporation of defects in the crystal structure leads to ferromagnetic interaction from TDOS calculation which is consistent with those already reported 17 , 18 , 21 . The magnetism mainly promoted by Mo- 4d orbital states.…”

“…However, there are very limited, and mostly theoretical studies on intrinsic magnetism based on monolayer structure calculation 17 – 20 . Theoretical and experimental work shows that in the absence of crystalline imperfections, the Mo-based TMDs are nonmagnetic 21 – 23 . Therefore, by adding defects one may induce magnetism into these materials and this ability can open up a host of new opportunities for spintronic applications.…”

Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

“…Han et al [122] irradiated MoS 2 single crystals with a thickness of about 50 µm by using high-energy electrons in ambient conditions at room temperature. The electron dose was 300 kGy (6.70 × 10 14 electrons/cm 2 ) and the acceleration energy of electrons was 0.7 MeV.…”

Large enhancement of thermoelectric performance in MoS 2 / h -BN heterostructure due to vacancy-induced band hybridization

“…Among these materials, MoS 2 has attracted special attention because of its well-defined spinsplitting under light illumination and/or applied magnetic fields (9)(10)(11). Extrinsic magnetic impurities in MoS 2 can be introduced by vacancies, dislocations, edges, strain, or doping by magnetic ions (12)(13)(14)(15)(16). However, due to its extreme sensitivity to external fluctuations and turbostratic interfaces,…”