Electron Beam Doping in Damageless Regions of Semiconductors by the Kick-Out Mechanism (Interstitialcy and Direct Interstitial Mechanism)

Abstract

It is demonstrated that the interchange of impurity foreign atoms between substitutional and interstitial sites occurring during the diffusion of impurities in damage-free Si and GaAs due to the electron beam doping by superdiffusion is controlled by the kick-out mechanism. Their diffusion profiles in semiconductors are in good agreement with the exact solution of Seeger's theory of the kick-out diffusion.

Electron beam doping of impurity atoms into semiconductors by superdiffusion

“…(iii) First kick-out mechanism: In previous papers [8,9] it was shown that the kick-out mechanism at the interface of three-layer systems for atoms migrating under electron irradiation plays an important role in EBD. For P doping, the thermal equilibrium between Si i and Si p may be established via self-interstitial P(P i ) at the interface between the P sheet and Si wafer by [14] Si i Si p + P i (Si i Si B + B i ) ,…”

“…The experiments on 750 keV EBD of B, P and N atoms into diamond wafers, and B and Al atoms into SiC wafers clarified that incident electrons do not penetrate all the way into the diamond or SiC substrate. The penetration depth for electrons at 750 keV is 0.76 mm in diamond, 0.86 mm in SiC, and 1.08 mm in B 4 C [9]. However, impurity atoms are successfully doped into both diamond and SiC.…”

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

“…(iii) First kick-out mechanism: In previous papers [19,20,21], it was shown that the kick-out mechanism at the interface of three-layer systems for atoms migrating under electron irradiation plays an important role in EBD. For P doping, the non-equilibrium between Si i and Si p may be established via self-interstitial P(P i ) at the interface between the P layer and Si substrate by [26] Si i ) ( Si P + P i (layer 2, system I) B i B si + Si i (system II) where Si p represents a Si atom in a P site, and Si i is a Si atom in an interstitial site.…”

“…In 1980, electron beam doping (EBD) by superdiffusion at room temperature was proposed by one of the authors (Wada) [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The superdiffusion technique is a non-equilibrium condition using electron irradiation of three-layer systems.…”