Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates

Wada, Takahiro; Takeda, Michihiko; Yasuda, Kyolchiro

doi:10.1007/bf02656674

Cited by 13 publications

(3 citation statements)

References 11 publications

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“…The proof that EBD is not a thermal process has been reported in Refs. [13,21]. In a two-layer structure of a Ge overlain sheet and a Si substrate, the number of Ge peaks in Si for a Rutherford backscattering spectroscopy (RBS) spectra increases with increasing irradiation temperature [21] at 20, 40 and 60 °C, respectively.…”

Section: Discussion 41 Mechanism Of Modified Ebdmentioning

confidence: 99%

“…As part of ongoing research into enhanced diffusion, Wada et al [7 -9] in a study on ntype germanium reported that the Hall coefficient in a 110 µm thick layer of the material changes from negative to positive at a depth of about 50 µm after exposure to an electron beam with total flux of 10 16 electrons/cm 2 at 7 MeV. Electron beam doping (EBD), first proposed by Wada [7][8][9][10], has been further developed by the present authors [11][12][13][14][15][16][17][18][19][20][21][22][23][24]. In the present paper, the effects of fine superdiffusion process was studied for three-layer structure.…”

Section: Introductionmentioning

confidence: 92%

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Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Wada¹,

Fujimoto

2003

phys. stat. sol. (c)

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The effect of the elegant superdiffusion process was examined in the unirradiated region for three layer structures. GaAs semiconductor substrates coated with vacuum-evaporated Si were doped with Si by electron beam doping (EBD) at 750 keV using GaAs/Si//Si/GaAs systems. The samples were exposed to an electron beam with a fluence of (3.7-5.0) × 10 17 electrons/cm 2 with a mean current density of 8.1 A/cm 2 in a Van de Graaff accelerator at 100 °C in a N 2 gas atmosphere. The irradiated samples were inspected by secondary-ion mass spectrometry and photoluminescence analysis, revealing the occurrence of superdiffusion. It was found that EBD occurs as a result of the interstitial migration of displaced interstitial atoms toward the Si//Si interface, strong surface diffusion at the interface, and high impurity concentrations at the interface that induce concentration-and recombination-enhanced diffusion. Two kickout mechanisms were identified for substitution of migrating atoms in the GaAs substrate.

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Section: Discussion 41 Mechanism Of Modified Ebdmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 92%

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Wada¹,

Fujimoto

2003

phys. stat. sol. (c)

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“…In 1980, electron beam doping (EBD) by superdiffusion at room temperature was proposed by one of the authors (Wada) [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The superdiffusion technique is a non-equilibrium condition using electron irradiation of three-layer systems.…”

Section: Introductionmentioning

confidence: 99%

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

Wada

Fujimoto²

2003

DDF

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Diodes were fabricated by electron beam doping (superdiffusion) for a non-equilibrium condition by electron irradiation. The entire electron beam doping process is composed mainly of three kinds of steps, as follows:displaced atoms by electron irradiation, surface diffusion of atoms, kick-out mechanism of impurity atoms. Impurity doping can be interpreted by the kick-out mechanism, which is a combination of interstitialcy and direct interstitial diffusion.

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Electron beam doping in substrates of overlayer Si/substrate GaAs, and evaporated

Wada

Takeda

1987

Nuclear Instruments and Methods in Physics Research Section B:

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Electron-beam doping-electron radiation effects in impurity overlayers and semiconductor substrates

Cited by 13 publications

References 11 publications

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Superdiffusion of impurity atoms in damage‐free regions of semiconductors

Diodes Fabricated by Electron Beam Doping (Superdiffusion)Technique in Semiconductors at Room Temperature

Electron beam doping in substrates of overlayer Si/substrate GaAs, and evaporated

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