Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide

Баранов, Е. А.; Konstantinov, V. O.; Shchukin, V. G.; Zamchiy, A. O.; Merkulova, I. E.; Lunev, N. A.; Володин, В. А.

doi:10.1134/s1063785021030172

Cited by 3 publications

(6 citation statements)

References 13 publications

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“…In this case, the NC-Ge are clearly subjected to mechanical compression, and their sizes cannot be determined from the analysis of the Raman spectra. The occurrence of mechanical compression stresses has already been detected after the complete crystallization of SiO x films using EBA [19]. The reasons for the occurrence of such stresses and their influence on the crystallization kinetics have not yet been specified and will be the subject of further research.…”

Section: Analysis Of Obtained Resultsmentioning

confidence: 99%

“…Further, to anneal the as-deposited films, an electron beam generated by a discharge electron gun with a hollow cathode was used [18]. The current density of the electron beam was 20 mA/cm 2 at an accelerating voltage of 2000 V. The choice of the annealing mode parameters is due to the results from the article [19], where it is shown that for an electron beam with an accelerating voltage of 1000 V and a current of 100 mA, even at an annealing time of 600 s, polysilicon was not formed, and the action of an electron beam with an accelerating voltage of 3000 V and a similar current led to the evaporation of a-SiO x :H thin film for 60 s. The sample surface area of electron beam irradiation beam was 0.3 cm 2 . The samples were placed perpendicular to the electron beam in a vacuum chamber with a pressure of 10 −2 Pa.…”

Section: Experiments Descriptionmentioning

confidence: 99%

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Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

et al. 2022

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Electron beam annealing was carried out to form amorphous and crystalline germanium clusters in GeO[SiO] and GeO[SiO2] films deposited on quartz and monocrystalline silicon substrates. Using electron microscopy, Raman spectroscopy, and light transmission and reflection spectroscopy, the structural transformations of the films and their optical properties were studied. From the analysis of Raman spectra, it was shown that amorphous germanium nanoclusters are present in the as-deposited GeO[SiO] film, while they are not observed in the as-deposited GeO[SiO2] film. Regimes of electron beam annealing which are necessary for the formation of germanium nanocrystals in GeO[SiO] and GeO[SiO2] films were found. It was shown that, at the same annealing parameters, the fraction of the crystalline phase of germanium in GeO[SiO] films were smaller than in GeO[SiO2] films. In addition, it was found that the fraction of the crystalline phase at the same annealing parameters is larger for films on a quartz substrate than on monocrystalline silicon substrate. The sizes of germanium nanocrystals formed as a result of electron beam annealing were determined from Raman spectra analysis. The proposed method of obtaining amorphous germanium nanoclusters and nanocrystals in films of nonstoichiometric germanosilicate glasses using electron beam annealing can be used to create ordered arrays of such nanostructures. Keywords: films of nonstoichiometric germanosilicate glass, electron beam annealing, germanium nanoclusters and nanocrystals.

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Section: Analysis Of Obtained Resultsmentioning

confidence: 99%

Section: Experiments Descriptionmentioning

confidence: 99%

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

et al. 2022

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“…Thus, organosilicon oligomers and polymers are "ideal" sources for obtaining ultrapure silicon ceramics and silicon nanoparticles [2,4].…”

Section: Introductionmentioning

confidence: 99%

“…In practice, organochlorosilanes of the general formula (R x SiCl 4−x ), polyorganosilanes whose main chain consists of silicon atoms (≡Si-Si≡) with side organic substituents, polyorganocarbosilanes (containing Si-C, Si-Si bonds), polyorganosiloxanes of the general formula R x Si(OR 1 ) 4−x (where R and R 1 are organic groups), tetraethoxysilanes of the general formula Si(OR) 4 , and others are used as initial silicon compounds for ceramics production [5].…”

Section: Introductionmentioning

confidence: 99%

“…There is a variety of methods of synthesis of films and highly dispersed powders based on SiO 2 and carbon-containing mineral phases, as well as methods of amorphous silica crystallization [4][5][6][7][8][9][10][11][12][13][14][15][16]. These include electron-beam, plasma-arc, pulsed photonic methods, laser annealing, chemical vapor deposition, high-temperature, metal-induced, and sol-gel methods.…”

Section: Introductionmentioning

confidence: 99%

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Synthesis and Characterization of Silicon–Carbon Powder and Its Resistance to Electron Irradiation

Pavlenko,

Cherkashina,

Edamenko

et al. 2023

J. Compos. Sci.

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The issue of crystallization of silicon oxide at low temperatures is a topical issue for the electronics of the future. Organosilicon oligomers and polymers are “ideal” sources for obtaining ultrapure silicon ceramics and silicon nanoparticles. This paper presents the results of the synthesis of highly dispersed silicon-carbon powder from an organohydrosiloxane oligomer and the method for increasing its crystallinity at low temperatures. The diffraction pattern of the resulting powder corresponds to the amorphous–crystalline state of the components in this material, as evidenced by two intense and broadened amorphous halos in the region of Bragg angles 2θ = 7–11° and 18–25°. The resulting silicon–carbon powder was subjected to electron irradiation (E = 10 MeV; D = 106–107 Gy). This paper presents the data on the changes in powder properties via IR-Fourier spectroscopy, X-ray phase analysis, and scanning electron microscopy. Irradiation with fast electrons with an absorbed dose of 106 Gy leads to a slight crystallization of the amorphous SiO2 phase. An increase in the absorbed dose of fast electrons from D = 106 to D = 107 Gy leads to the opposite effect. An amorphization of silica is observed. This study showed the possibility of the crystallization of a silicon–carbon powder without a significant increase in temperature, acting only with electron irradiation. It is necessary to continue further research on expanding the boundaries of the optimal doses of absorbed radiation from fast electrons in order to achieve the maximum effect of the crystallization of silicon–carbon powder.

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Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing

Konstantinov,

Baranov,

Fan

et al. 2024

Tech. Phys.

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Electron-Beam Crystallization of Thin Films of Amorphous Silicon Suboxide

Cited by 3 publications

References 13 publications

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

Formation of germanium nanocrystals and amorphous nanoclusters in GeO[SiO] and GeO[SiO-=SUB=-2-=/SUB=-] films using electron beam annealing

Synthesis and Characterization of Silicon–Carbon Powder and Its Resistance to Electron Irradiation

Formation of Germanium Nanocrystals and Amorphous Nanoclusters in GeO[SiO] and GeO[SiO2] Films Using Electron Beam Annealing

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