Electron-beam-assisted etching of CrOx films by Cl2

Abstract

Based on analysis by in situ Auger electron spectroscopy, partially oxidized Cr films, 3 -10 nm thick, were etched by the combination of 2 keV electrons and Cl 2 ͑g͒. The Cl 2 gas pressure in the area irradiated by the e beam is critical and must be in the mTorr regime. For the flux ͑8 mA cm −2 ͒ of electrons used, the etching rate saturated for estimated local Cl 2 pressures above 2 mTorr. The effects on etching of small amounts of Si are described.

Pulsed Laser-Assisted Focused Electron-Beam-Induced Etching of Titanium with XeF2: Enhanced Reaction Rate and Precursor Transport

“…Additionally, the FEBIE process has better spatial resolution due to the smaller beam spot size, though proximity effects recently enumerated for electron-beam-induced deposition (EBID) have to be considered. FEBIE has opened up paths for high-resolution nanopatterning of materials such as photoresist, SiO 2 , SiN x , Al 2 O 3 , Cr, CrO x , TaN, GaAs, and Ti by using a variety of precursor gases such as O 2 , XeF 2 , NOCl, and Cl 2 . ,,− …”

Focused electron beam induced etching of titanium with XeF2

“…Due to its specificity with the electron beam, this technique opens up paths for local high resolution nanostructuring of materials. The FEBIE process has been demonstrated on SiO 2 , SiN, Al, Cr, CrO x , TaN, and GaAs [7][8][9][10][11][12][13] by using XeF 2 , NOCl, or Cl 2 as the precursor gas.…”

Nanoestructuras funcionales fabricadas mediante un haz de electrones o iones focalizado

“…Como ya hemos comentado, el FEB no tiene un efecto de pulverizado físico a los voltajes de aceleración con los que se trabaja en un SEM convencional y los procesos de ataque se basan en la reactividad del gas adsorbido y en la volatilidad de los productos de la reacción. El proceso ha sido demostrado en materiales como por ejemplo, SiO 2 , SiN, Al, Cr, CrO x , TaN, GaAs y Ge [26][27][28][29][30][31][32][33]…”