Electron backscatter diffraction of a Ge growth tip from a vertical gradient freeze furnace

Electron backscatter diffraction analysis of a CZT growth tip from a vertical gradient freeze furnace

“…In this area, the (0 1 1) poles of the matrix (colored red) align with the growth direction and this grain is not as close to the (1 1 2) direction as those grains containing twins. The alignment of both matrix grain and twin (1 1 2) poles with the apparent growth direction is highly favorable for CZT, which adopts this orientation for similar reason as do the diamond cubic materials, such as Ge and Si [17]. Twinning along the (1 1 1) plane is a lowenergy fault in CZT and the crystallography allows both regions to continue to grow along the favorable (1 1 2) direction.…”

“…This is explained by the authors as follows: As {1 1 1} planes are the densest planes with largest interplanar spacing in the zinc-blende structure of CZT, the interactional force between {1 1 1} planes is the weakest, hence relatively easier glide on the {1 1 1} planes. Then, the selection of (1 1 2) growth direction follows from the local atomic interface structure arguments put forward for Ge growth [17].…”

“…In Pacific Northwest National Laboratory (PNNL), we have used a collage of EBSD images [17] to illustrate and determine the grain structure, grain boundary orientation, twin structure, and overall crystal growth direction in the growth-tip region of a high-purity Ge boule of 4.2-cm diameter grown using low-pressure Bridgeman technique. We have observed that the grain structure of the tip region is controlled by the sidewall nucleation of a stray grain that competes with other grains for dominance as the growth progresses.…”

Dependence of the Electron Beam Energy and Types of Surface to Determine EBSD Indexing Reliability in Yttria-Stabilized Zirconia

“…Similar polishing procedures were utilized earlier for the preparation of YSZ pellets and other materials~Radhakrishnan et al, 2005;Henager et al, 2008!. A dual-beam focused ion beam/scanning electron mi-croscope~FIB/SEM! doped ZrO 2 powder~from Tosoh Corp., Tokyo, Japan!…”

Simulating Interface Growth and Defect Generation in CZT – Simulation State of the Art and Known Gaps

“…The first principle calculation show that the stacking fault energy is about 0.1 J/m2 for CdTe. Therefore, the twin is common defects in growth crystal with zincblende structures [90,[127][128][129][130][131][132][133][134]. Figure 8 shows the twin structures observed in CZT.…”