Electron and thermal transport via variable range hopping in MoSe2 single crystals

Suri, Dhavala; Patel, R. S.

doi:10.1063/1.4984953

Cited by 10 publications

(7 citation statements)

References 48 publications

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“…43 Secondly, at finite temperatures and deep in the insulating regime the main mechanism for electronic conductivity is the phonon-assisted (or variablerange) hopping. [44][45][46][47] Although the mechanism described in the present paper should dominate the charge and heat transport at sufficiently low temperatures, there must exist a cross-over temperature, above which the transport is dominated by the phonon-assisted (or variable-range) hopping. This cross-over temperature depends on the system.…”

Section: Conclusion and Discussionmentioning

confidence: 99%

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Thermoelectricity near Anderson localization transitions

et al. 2017

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The electronic thermoelectric coefficients are analyzed in the vicinity of one and two Anderson localization thresholds in three dimensions. For a single mobility edge, we correct and extend previous studies, and find universal approximants which allow to deduce the critical exponent for the zero-temperature conductivity from thermoelectric measurements. In particular, we find that at non-zero low temperatures the Seebeck coefficient and the thermoelectric efficiency can be very large on the "insulating" side, for chemical potentials below the (zero-temperature) localization threshold. Corrections to the leading power-law singularity in the zero-temperature conductivity are shown to introduce non-universal temperature-dependent corrections to the otherwise universal functions which describe the Seebeck coefficient, the figure of merit and the Wiedemann-Franz ratio. Next, the thermoelectric coefficients are shown to have interesting dependences on the system size. While the Seebeck coefficient decreases with decreasing size, the figure of merit first decreases but then increases, while the Wiedemann-Franz ratio first increases but then decreases as the size decreases. Small (but finite) samples may thus have larger thermoelectric efficiencies. In the last part we study thermoelectricity in systems with a pair of localization edges, the ubiquitous situation in random systems near the centers of electronic energy bands. As the disorder increases, the two thresholds approach each other, and then the Seebeck coefficient and the figure of merit increase significantly, as expected from the general arguments of Mahan and Sofo [J. D. Mahan and J. O. Sofo, Proc. Natl. Acad. Sci. U.S.A. 93, 7436 (1996)] for a narrow energy-range of the zero-temperature metallic behavior.Comment: 16 pages, 11 figures, close to the published versio

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Section: Conclusion and Discussionmentioning

confidence: 99%

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confidence: 99%

Thermoelectricity near Anderson localization transitions

et al. 2017

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“…VRH applies to semiconductors, but it might also occur in semimetals with a high degree of disorder. 2D VRH has been reported for MLs of other semiconducting TMDs such as MoS 2 [36,37], MoSe 2 [31,38,39] and MoTe 2 [38], and systematically associated with low carrier mobilities in the range 1-10 cm 2 V −1 s −1 . Therefore, the high carrier mobility, together with its weak sensitivity to the temperature ranging from 50 K to 200 K, suggests that the conduction above 50 K is largely dominated by band conduction and that VRH becomes sizable only below 50 K. This implies that our films possess a semiconducting band structure instead of a semimetallic one.…”

Section: Discussionmentioning

confidence: 88%

High carrier mobility in single-crystal PtSe₂ grown by molecular beam epitaxy on ZnO(0001)

Bonell¹,

Marty²,

Vergnaud³

et al. 2021

2D Mater.

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PtSe2 is attracting considerable attention as a high mobility two-dimensional material with envisioned applications in microelectronics, photodetection and spintronics. The growth of high quality PtSe2 on insulating substrates with wafer-scale uniformity is a prerequisite for electronic transport investigations and practical use in devices. Here, we report the growth of highly oriented few-layers PtSe2 on ZnO(0001) by molecular beam epitaxy. The crystalline structure of the films is characterized with electron and x-ray diffraction, atomic force microscopy and transmission electron microscopy. The comparison with PtSe2 layers grown on graphene, sapphire, mica, SiO2 and Pt(111) shows that among insulating substrates, ZnO(0001) yields films of superior structural quality. Hall measurements performed on epitaxial ZnO/PtSe2 with five monolayers of PtSe2 show a clear semiconducting behaviour and a high mobility in excess of 200 cm2 V−1 s−1 at room temperature and up to 447 cm2 V−1 s−1 at low temperature.

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“… 53 , 54 , 55 , 56 , 57 Additionally, molybdenum disulfide (MoS 2 ) possesses both semiconductor properties 290 and electron hopping behavior, 291 allowing it to naturally act as POD, CAT, and SOD. 292 , 293 Other nanoparticles such as α-FeSe, manganese selenide (MnSe), and molybdenum selenide (MoSe 2 ) also demonstrate intrinsic POD activity 55 , 294 , 295 , 296 due to their lower band gaps and electron hopping, 297 , 298 including the superconductivity of α-FeSe. 236 , 299 , 300 …”

Section: Mechanisms Of Electron Transfer In Inorganic Enzymesmentioning

confidence: 99%

Unveiling the role of inorganic nanoparticles in Earth’s biochemical evolution through electron transfer dynamics

Huang

2024

iScience

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Electron and thermal transport via variable range hopping in MoSe2 single crystals

Abstract: Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current inplane (CIP) and current perpendicular to plane (CPP) as a function of temperature.

Cited by 10 publications

References 48 publications

Thermoelectricity near Anderson localization transitions

Thermoelectricity near Anderson localization transitions

High carrier mobility in single-crystal PtSe₂ grown by molecular beam epitaxy on ZnO(0001)

Unveiling the role of inorganic nanoparticles in Earth’s biochemical evolution through electron transfer dynamics

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Electron and thermal transport via variable range hopping in MoSe2 single crystals

Abstract: Bulk single crystal Molybdenum diselenide has been studied for its electronic and thermal transport properties. We perform resistivity measurements with current inplane (CIP) and current perpendicular to plane (CPP) as a function of temperature.

Cited by 10 publications

References 48 publications

Thermoelectricity near Anderson localization transitions

Thermoelectricity near Anderson localization transitions

High carrier mobility in single-crystal PtSe2 grown by molecular beam epitaxy on ZnO(0001)

Unveiling the role of inorganic nanoparticles in Earth’s biochemical evolution through electron transfer dynamics

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Product

Resources

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High carrier mobility in single-crystal PtSe₂ grown by molecular beam epitaxy on ZnO(0001)