Electron and phonon temperature relaxation in semiconductors excited by thermal pulse

Gurevich, Yu. G.; Logvinov, G. N.; Carballo-Sánchez, A. F.; Drogobitskiy, Yu. V.; Salazar, José Luis León

doi:10.1063/1.1424057

Cited by 10 publications

(5 citation statements)

References 9 publications

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“…Similar results can be found in many problems related to heat propagation in materials following the absorption of laser pulses [18][19][20], such as the transient heat transport by electrical carriers and phonons in semiconductors [21,22], among others. Figure 2 shows open circles with typical heating and cooling curves measured on a 500µm thick copper sample in vacuum of 4 × 10 −3 Torr and room temperature of 300 K. The results of measurements at atmospheric pressure on the same sample are plotted as full circles for comparison purposes.…”

Section: Consideration Of Heat Conductionsupporting

confidence: 63%

Specific Heat Measurements by a Thermal Relaxation Method: Influence of Convection and Conduction

et al. 2006

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This paper involves the well-known thermal relaxation method for measurement of the specific heat (c) of thin solid samples. Although this method was applied successfully in recent years for the characterization of different materials, in this work some aspects that must be taken into account in order to avoid problems based on satisfying the required experimental conditions of heat flux imposed by the physical model used for data analysis and processing will be discussed. For this purpose, for a given experimental geometry, the heat diffusion equation will be solved in order to obtain the sample's requirements for reliable measurements of c, regarding its thickness and thermal conductivity. An experimental device is described that can be used for the study of the influence of heat dissipation by convection on the method. A computer simulation was performed for comparing the simple model with one that takes to in account the gradient of temperature inside the sample. The results of measurements are presented.

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Section: Consideration Of Heat Conductionsupporting

confidence: 63%

Specific Heat Measurements by a Thermal Relaxation Method: Influence of Convection and Conduction

et al. 2006

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“…The knowledge of the energy and momentum relaxation is also indispensable for study of the high-field transport of charge carriers [3,4,5], including the case of electric breakdown [6,7]. One should also mention such phenomena as laser ablation [8], abrupt thermal impact [9,10], ultra-fast phase transitions [11], photocatalysis [12] and the solar energy conversion [13,14]. In the investigation of the energy relaxation processes in Si [1,15], GaAs [14,16,17,18], GaP [19], InP [19,20] and CdSe [21] the non-equilibrium distribution of electrons usually is simulated as a quasi-Fermi function which is localized close to the bottom the conduction band.…”

Section: Introductionmentioning

confidence: 99%

Electron-phonon relaxation and excited electron distribution in gallium nitride

Zhukov

Tyuterev

Chulkov

et al. 2016

Journal of Applied Physics

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Abstract. We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this lowenergy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy 'tail' covers largely the conduction band. The shape of the highenergy 'tail' strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electronphonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi 'tail' is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can affect essentially the charge transport in the irradiated and highly doped semiconductors.

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“…It may also help in understanding the carriers' behaviour in strong electric fields, including those which are close to the electric breakdown fields [6,7]. The effects of abrupt thermal impact [8,9] and other extremal exposures can also be more clearly understood. The study of energy relaxation is essential for understanding phenomena like the laser ablation [10], ultra-fast phase transformations [11], photocatalysis [12] and solar energy conversion in the UV frequency range [13,14].…”

Section: Introductionmentioning

confidence: 99%

Relaxation of highly excited carriers in wide-gap semiconductors

Tyuterev¹,

Zhukov²,

Echenique³

et al. 2014

J. Phys.: Condens. Matter

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The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show that the non-equilibrium distributions of electrons and holes have a customary Fermi-like shape with some effective temperature but also possess a high-energy non-Fermian 'tail'. The latter may extend deep into the conduction and valence bands while the Fermi-like component is localized within a small energy range just above the edge of the band gap. The effective temperature, effective chemical potential, and the shape of the high-energy component are governed by the process of electron-phonon interactions as well as by the rates of carrier generation and inter-band radiative recombination.

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Electron and phonon temperature relaxation in semiconductors excited by thermal pulse

Cited by 10 publications

References 9 publications

Specific Heat Measurements by a Thermal Relaxation Method: Influence of Convection and Conduction

Specific Heat Measurements by a Thermal Relaxation Method: Influence of Convection and Conduction

Electron-phonon relaxation and excited electron distribution in gallium nitride

Relaxation of highly excited carriers in wide-gap semiconductors

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