Electron and nuclear spin resonance in n-type silicon carbide

Hardeman, G.E.G.

doi:10.1016/0022-3697(63)90241-5

“…Suzuki's study revealed the same result as ours [50]. It is well known that nitrogen can exit in SiC as a solid solution, and nitrogen atoms are considered to occupy carbon sites [51]. Seo et al reported that the lattice constant of SiC decreased by solubilization of nitrogen into SiC [52], and Suzuki et al found that, as the nitrogen content increased, the lattice constant of the ␤-SiC nanocrystals decreased rapidly and linearly in nano SiC particles doped with nitrogen [50].…”

Section: Resultssupporting

confidence: 80%

Microwave absorbing property and complex permittivity of nano SiC particles doped with nitrogen

Zhao

¹

,

Luo²,

Zhou³

2010

Journal of Alloys and Compounds

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“…This robust DNP could be applied to initialize quantum memories in quantumcommunication technologies, especially since the color centers are telecom-range emitters, with narrow optical linewidths at low temperatures [16,21,37]. Other applications of DNP, including solid-state nuclear gyroscopes [38,39] and entanglement-enhanced metrological devices [40], can employ SiC's long nuclear spin-lattice relaxation times [27,41] and its amenability to sophisticated growth and device fabrication.…”

mentioning

confidence: 99%

“…In this dynamic nuclear polarization (DNP) [27,28] process, the optically pumped polarization of electron spins bound to either neutral divacancy [4,5,8,10,14] or PL6 [10,14,16] color centers is transferred to proximate nuclei via the hyperfine interaction. Optically polarizing nuclei in SiC is experimentally straightforward, requiring only broadband illumination and a small external magnetic field (300-500 G), with which we tune color-center ensembles to their ground-state (GS) or excited-state (ES) spin-level anticrossings (the GSLAC and ESLAC, respectively).…”

mentioning

confidence: 99%

Optical Polarization of Nuclear Spins in Silicon Carbide

Falk

¹

,

Klimov

²

,

Ivády

³

et al. 2015

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We demonstrate optically pumped dynamic nuclear polarization of 29 Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H-and 6H-SiC. The 99 ± 1% degree of polarization at room temperature corresponds to an effective nuclear temperature of 5 K. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging. Main text:Silicon carbide is a promising material for quantum electronics at the wafer scale. It is both amenable to sophisticated device processing [1] and a host for several types of vacancy-related paramagnetic color centers with remarkable attributes . Much like the diamond nitrogen-vacancy center [24, 25], these color centers localize electronic states that can exhibit millisecond-long spin coherence times [18], singlespin addressability through confocal optically detected magnetic resonance (ODMR) [18,19], and ODMR persistence up to room temperature [10,11,14,19]. Although fluctuating nuclear spins are a principal source of electronic spin decoherence [26], their presence is not purely detrimental. If polarized and controlled, nuclear spins in SiC would be a technologically important resource.In this Letter, we show that near-infrared light can nearly completely polarize populations of 29 Si nuclear spins in SiC. This process is based on dynamic nuclear polarization (DNP) [27,28]: the optically pumped polarization of of electron spins bound to either neutral divacancy [4,

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“…This robust DNP could be applied to initialize quantum memories in quantumcommunication technologies, especially since the color centers are telecom-range emitters, with narrow optical linewidths at low temperatures [16,21,37]. Other applications of DNP, including solid-state nuclear gyroscopes [38,39] and entanglement-enhanced metrological devices [40], can employ SiC's long nuclear spin-lattice relaxation times [27,41] and its amenability to sophisticated growth and device fabrication.The divacancy defect in SiC is a silicon vacancy (V Si ) adjacent to a carbon vacancy (V C ) [ Fig. 1(a)].…”

mentioning

confidence: 99%

“…In this dynamic nuclear polarization (DNP) [27,28] process, the optically pumped polarization of electron spins bound to either neutral divacancy [4,5,8,10,14] or PL6 [10,14,16] color centers is transferred to proximate nuclei via the hyperfine interaction. Optically polarizing nuclei in SiC is experimentally straightforward, requiring only broadband illumination and a small external magnetic field (300-500 G), with which we tune color-center ensembles to their ground-state (GS) or excited-state (ES) spin-level anticrossings (the GSLAC and ESLAC, respectively).…”

mentioning

confidence: 99%

Polarizing Nuclear Spins in Silicon Carbide

Cappellaro

¹

2015

Physics

0

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We demonstrate optically pumped dynamic nuclear polarization of 29 Si nuclear spins that are strongly coupled to paramagnetic color centers in 4H-and 6H-SiC. The 99% AE 1% degree of polarization that we observe at room temperature corresponds to an effective nuclear temperature of 5 μK. By combining ab initio theory with the experimental identification of the color centers' optically excited states, we quantitatively model how the polarization derives from hyperfine-mediated level anticrossings. These results lay a foundation for SiC-based quantum memories, nuclear gyroscopes, and hyperpolarized probes for magnetic resonance imaging. DOI: 10.1103/PhysRevLett.114.247603 PACS numbers: 76.70.Fz, 61.72.jn, 71.55.-i, 76.30.Mi Silicon carbide is a promising material for quantum electronics at the wafer scale. It is both an industrially important substrate for high-performance electronic devices [1] and a host to several types of vacancy-related paramagnetic color centers with remarkable attributes . Much like the diamond nitrogen-vacancy center [24,25], these color centers have electronic spin states that can be addressed at either ensemble or single-spin levels [18,19] through optically detected magnetic resonance (ODMR). Moreover, spin coherence times can exceed 1 ms [18], and ODMR can persist up to room temperature [10,11,14,19]. Although the fluctuating nuclear spin bath is a principal source of electronic spin decoherence in these types of systems [26], nuclear spins in SiC are not purely detrimental. If polarized and controlled, they would be a technologically valuable resource.In this Letter, we show that near-infrared light can nearly completely polarize populations of 29 Si nuclear spins in SiC. In this dynamic nuclear polarization (DNP) [27,28] process, the optically pumped polarization of electron spins bound to either neutral divacancy [4,5,8,10,14] or PL6 [10,14,16] color centers is transferred to proximate nuclei via the hyperfine interaction. Optically polarizing nuclei in SiC is experimentally straightforward, requiring only broadband illumination and a small external magnetic field (300-500 G), with which we tune color-center ensembles to their ground-state (GS) or excited-state (ES) spin-level anticrossings (the GSLAC and ESLAC, respectively). Optically pumping crystals has previously led to roomtemperature DNP in napthalene [29], diamond [30][31][32][33][34][35], and GaNAs [36]. Our results show that room-temperature DNP can be efficiently driven in a material that plays a leading role in the semiconductor industry.We find that SiC color centers can mediate a high degree (>85%) of ESLAC-derived nuclear polarization from at least 5 to 298 K, a surprisingly broad temperature range for this mechanism. This robust DNP could be applied to initialize quantum memories in quantumcommunication technologies, especially since the color centers are telecom-range emitters, with narrow optical linewidths at low temperatures [16,21,37]. Other applications of DNP, including solid-state nuclear gyroscopes [38,39...

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Electron and nuclear spin resonance in n-type silicon carbide

Cited by 23 publications

References 7 publications

Microwave absorbing property and complex permittivity of nano SiC particles doped with nitrogen

Microwave absorbing property and complex permittivity of nano SiC particles doped with nitrogen

Optical Polarization of Nuclear Spins in Silicon Carbide

Polarizing Nuclear Spins in Silicon Carbide

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