Electron and Lattice Stages in the Valence Transition in SmTe under a High Hydrostatic Pressure

Tsiok, O. B.; Khvostantsev, L. G.; Смирнов, И. А.; Golubkov, A. V.

doi:10.1134/1.1926436

Cited by 11 publications

(12 citation statements)

References 8 publications

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“…2(d)]. 28 However, owing to its high lattice thermal conductivity of about 8 W m −1 K −1 at normal conditions [ Fig. 2(b)], this material cannot reach high ZT values in principle.…”

Section: Effect Of High Pressure On Thermoelectric Propertiesmentioning

confidence: 99%

“…2(b)]. 28 For the original phase of SmTe that is stable below 4 GPa and has a bulk modulus B 0 ∼ 40 GPa, 36 Eq. (2) does indeed describe the pressure dependence of the thermal conductivity, but with a much lower parameter w, of about 5.4 and 2.7 for samples 1 and 2, respectively.…”

Section: Effect Of High Pressure On Thermoelectric Propertiesmentioning

confidence: 99%

“…Pressure dependences of (a) thermoelectric power (Seebeck coefficient), (b) thermal conductivity, (c) electrical resistivity, and (d) calculated figure of merit ZT for two single-crystalline samples of SmTe (1, n-type sample annealed in Sm vapor, with n ≈ 8 × 10 18 cm −3 ; 2, undoped p-type stoichiometric sample) at room temperature. Data taken from Tsiok et al 28 on the bandgap E g in different ways, as follows: 33…”

Section: B Mechanism Of High-pressure Effect On Thermoelectric Propementioning

confidence: 99%

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Strategies and challenges of high-pressure methods applied to thermoelectric materials

Morozova

Korobeinikov

Ovsyannikov

2019

Journal of Applied Physics

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We describe the current state of experimental studies of the effects of applied high pressure or stress on the thermoelectric properties and performance parameters of thermoelectric materials, as well as the challenges faced in this area and possible directions for future work. We summarize and analyze literature data on the effects of high pressure on the Seebeck coefficient (thermoelectric power) of different materials that are related to common families of thermoelectrics, such as Bi

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“…2(d)]. 28 However, owing to its high lattice thermal conductivity of about 8 W m −1 K −1 at normal conditions [ Fig. 2(b)], this material cannot reach high ZT values in principle.…”

Section: Effect Of High Pressure On Thermoelectric Propertiesmentioning

confidence: 99%

Section: Effect Of High Pressure On Thermoelectric Propertiesmentioning

confidence: 99%

Section: B Mechanism Of High-pressure Effect On Thermoelectric Propementioning

confidence: 99%

See 1 more Smart Citation

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Morozova

Korobeinikov

Ovsyannikov

2019

Journal of Applied Physics

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“…In many cases, an applied pressure has also been shown to improve the properties of materials, sometimes drastically [ 7 ]. An example case is that of SmTe where, under applying a 4 GPa pressure, the thermoelectric performance was improved by five orders of magnitude due to an over 10 6 -fold decrease in its electrical resistivity [ 7 , 8 ].…”

Section: Introductionmentioning

confidence: 99%

High Pressure Properties of a Ba-Cu-Zn-P Clathrate-I

Dolyniuk

Kovnir

2016

Materials

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The high pressure properties of the novel tetrel-free clathrate, Ba8Cu13.1Zn3.3P29.6, were investigated using synchrotron powder X-ray diffraction. The pressure was applied using a diamond anvil cell. No structural transitions or decomposition were detected in the studied pressure range of 0.1–7 GPa. The calculated bulk modulus for Ba8Cu13.1Zn3.3P29.6 using a third-order Birch-Murnaghan equation of state is 65(6) GPa at 300 K. This bulk modulus is comparable to the bulk moduli of Ge- and Sn-based clathrates, like A8Ga16Ge30 (A = Sr, Ba) and Sn19.3Cu4.7P22I8, but lower than those for the transition metal-containing silicon-based clathrates, Ba8TxSi46−x, T = Ni, Cu; 3 ≤ x ≤ 5.

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“…In these systems, trivalent and divalent states coexist under external pressure, significantly modifying ESCs along with valence states. Figure a illustrates ρ changes between ambient conditions ( ρ amb ) and critical pressure ( ρ c ), where ρ drops off in the NaCl structure due to pressure. − For TmS, TmSe, YbTe, YbSe, and YbS, shown by triangle symbols in Figure a, the resistivity value at the highest reported pressure was taken as ρ c because the pressure range for sufficient valence mixing has not been reported. As this figure suggests, VFSs can significantly alter their electronic properties without any underlying change in atomic arrangement or species.…”

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confidence: 99%

Nonvolatile Isomorphic Valence Transition in SmTe Films

Hatayama,

Mori,

Saito

et al. 2024

ACS Nano

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The burgeoning field of optoelectronic devices necessitates a mechanism that gives rise to a large contrast in the electrical and optical properties. A SmTe film with a NaCl-type structure demonstrates significant differences in resistivity (over 105) and band gap (approximately 1.45 eV) between as-deposited and annealed films, even in the absence of a structural transition. The change in the electronic structure and accompanying physical properties is attributed to a rigid-band shift triggered by a valence transition (VT) between Sm2+ and Sm3+. The stress field within the SmTe film appears closely tied to the mixed valence state of Sm, suggesting that stress is a driving force in this VT. By mixing the valence states, the formation energy of the low-resistive state decreases, providing nonvolatility. Moreover, the valence state of Sm can be regulated through annealing and device-operation processes, such as applying voltage and current pulses. This investigation introduces an approach to developing semiconductor materials for optoelectrical applications.

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Electron and Lattice Stages in the Valence Transition in SmTe under a High Hydrostatic Pressure

Cited by 11 publications

References 8 publications

Strategies and challenges of high-pressure methods applied to thermoelectric materials

Strategies and challenges of high-pressure methods applied to thermoelectric materials

High Pressure Properties of a Ba-Cu-Zn-P Clathrate-I

Nonvolatile Isomorphic Valence Transition in SmTe Films

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