Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen

Miki, Hiroshi; Noguchi, M.; Yokogawa, Ken’etsu; Kim, Bo-Woo; Asada, Kunihiro; Sugano, Takuo

doi:10.1109/16.8799

Cited by 84 publications

(18 citation statements)

References 14 publications

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“…13 P b centers are silicon dangling bond centers precisely on the Si/SiO 2 boundary. [11][12][13][14][15][16][17][22][23][24] The spectrometer settings used to obtain the data in Fig. 3 are less than optimum for both the EЈ and P b spectra.…”

Section: Resultsmentioning

confidence: 99%

“…Positively charged EЈ centers may be generated by exposing oxides to modest (Ͻ10 14 holes/cm 2 ) fluences of holes, [11][12][13][14][15][16][17] for example, by exposing the oxides to a moderate dose ͑р10 Mrad͒ of ionizing radiation. Neutral EЈ centers can be generated by subjecting oxides to extended periods of vacuum ultraviolet illumination ͑VUV͒.…”

Section: Experimental Techniquesmentioning

confidence: 99%

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E ′ centers and leakage currents in the gate oxides of metal oxide silicon devices

Lenahan

Mele

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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We have made electron spin resonance and current density versus voltage measurements on a variety of thin SiO2 films on silicon. In some of the films we have generated fairly high (⩾1018 cm3) densities of neutral E′ centers near the Si/SiO2 interface. Neutral E′ centers are paramagnetic defects in which an unpaired electron resides in a high p-character wave function primarily located on a silicon atom bonded to three oxygen atoms. We find that the generation of these centers is consistently accompanied by the generation of large leakage currents in the oxide. We also find that the annihilation of these E′ centers by a low temperature (200 °C) anneal in air is consistently accompanied by the annihilation of the large leakage currents. Many investigations have established that high electric field stressing creates leakage currents in thin oxide films on silicon. Studies of at least two independent groups have also established that high electric field stressing generates significant E′ density within the stressed oxides. Our study demonstrates a strong link between E′ center density and oxide leakage currents. Our results, combined with the results of the earlier aforementioned studies, strongly indicate an important role for E′ centers in stress induced leakage currents. These leakage currents are a fundamental problem in the very thin SiO2 films on silicon utilized in present day metal oxide silicon devices.

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Section: Resultsmentioning

confidence: 99%

Section: Experimental Techniquesmentioning

confidence: 99%

E ′ centers and leakage currents in the gate oxides of metal oxide silicon devices

Lenahan

Mele

2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…Studies by at least four independent groups indicate a dominating role for P b centers in several technologically relevant device instabilities. [6][7][8][9][10][11][12] Quite a few MOS oxide centers have also been identified with EPR. The most important centers are EЈ defects, 8,9,[11][12][13][14] usually holes trapped at oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

“…Later studies refined and reinforced this conclusion. [4][5][6][7][8][9][10][11][12] P b centers are silicon ''dangling bond'' centers dominating interface traps at the the Si/SiO 2 boundary. Studies by at least four independent groups indicate a dominating role for P b centers in several technologically relevant device instabilities.…”

Section: Introductionmentioning

confidence: 99%

What can electron paramagnetic resonance tell us about the Si/SiO2 system?

Lenahan

Conley²

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

349

238

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Electron paramagnetic resonance ͑EPR͒ measurements of Si/SiO 2 systems began over 30 years ago. Most EPR studies of Si/SiO 2 systems have dealt with two families of defects: P b centers and EЈ centers. Several variants from each group have been observed in a wide range of Si/SiO 2 samples. Some of the most basic aspects of this extensive, body of work remain controversial. EPR is an extraordinary powerful analytical tool quite widely utilized in chemistry, biomedical research, and solid state physics. Although uniquely well suited for metal-oxide-silicon ͑MOS͒ device studies, its capabilities are not widely understood in the MOS research and development community. The impact of EPR has been limited in the MOS community by a failure of EPR spectroscopists to effectively communicate with other engineers and scientists in the MOS community. In this article we hope to, first of all, ameliorate the communications problem by providing a brief but quantitative introduction to those aspects of EPR which are most relevant to MOS systems. We review, critically, those aspects of the MOS/EPR literature which are most relevant to MOS technology and show how this information can be used to develop physically based reliability models. Finally, we briefly review EPR work dealing with impurity defects in oxide thin films.

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“…Miki et al determined the capture cross-section of wet oxide film with 1 MHz C-V characteristics during avalanche injection. Assuming a single level model, the capture cross-section was estimated to be 2 · 10 À18 cm 2 and the trap was related to water [13]. Obviously, our result suggests that the bulk trap in the PECVD silicon oxide is neutral electron trap relating to water.…”

Section: Discussionmentioning

confidence: 94%

Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment

Zhong

Tanaka

Sugawa

et al. 2005

Journal of Non-Crystalline Solids

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Electron and hole traps in SiO/sub 2/ films thermally grown on Si substrates in ultra-dry oxygen

Cited by 84 publications

References 14 publications

E ′ centers and leakage currents in the gate oxides of metal oxide silicon devices

E ′ centers and leakage currents in the gate oxides of metal oxide silicon devices

What can electron paramagnetic resonance tell us about the Si/SiO2 system?

Improvement of the electrical properties of PECVD silicon oxide using high-density and low-ion-energy plasma post-treatment

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