Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides

Thermally stimulated luminescence of Ce and Tb doped SiO2 sol–gel glasses

“…In the past, a similar evaluation was performed on the TSL of thin silica films obtained by oxygen implantation on silicon in the 190-290 K interval [10]. It is very interesting to remark that, in spite of the different origin and doping of our present silica samples, the present data are in good agreement with those previously obtained in [10] as well as with available literature data on trap energies based on electrical methods [12][13][14]. The present study, dealing with TSL in a very wide temperature range and taking advantage of intense TSL signals provided by the presence of luminescent activators, represents an extension of the previously mentioned investigations and confirms the common and intrinsic nature of traps in different silica forms.…”

Impact of supplemental implantation of oxygen on defect centers in the separation by implantation of oxygen structure

“…11 All these features have been related to oxygen deficiency ͑i.e., excess Si-Si bonds͒ of the SIMOX BOX. More recently, very similar properties have been observed in bonded and etchback SOI ͑BESOI͒ material [12][13][14] and in standard thermal oxide substrates covered with a polysilicon layer and annealed at 1320°C. 13,15 Based on these observations, it has been suggested 12 that chemical reduction of the BOX during the high-temperature formation anneal, producing excess Si-Si bonds in the BOX and causing accumulation of oxygen in the interfacial Si regions, 16 is the process responsible for these similarities.…”

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

“…Once trapped, some of the holes are slowly neutralized by thermal emission of electrons from the oxide valence band at room temperature [12,[28][29][30][31]. In addition to hole trapping, electrons can also be trapped throughout the bulk of the buried oxide in shallow levels [12,32].…”

“…Previous work [12,[28][29][30][31] has shown that up to 100% of the radiation-generated holes that escape initial recombination are trapped in the bulk of the oxide at deep trap sites close to their point of origin. Once trapped, some of the holes are slowly neutralized by thermal emission of electrons from the oxide valence band at room temperature [12,[28][29][30][31].…”