Electron and hole mobility in <i>tris</i>(8-hydroxyquinolinolato-N1,O8) aluminum

Kepler, R. G.; Beeson, P.M.; Jacobs, Steve; Anderson, R. A.; Sinclair, Michael B.; Valencia, V. S.; Cahill, Paul A.

doi:10.1063/1.113806

Cited by 412 publications

(183 citation statements)

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“…The increased onset voltage and decreased OMAR can be rationalized considering the increase in the electroninjection barrier and the resulting increase of the interface resistance, respectively, when using high work function cathodes (Ca has the lowest work-function, followed by Al, whereas Au has one of the largest work functions). This strong dependence of OMAR in Alq 3 on the choice of cathode material was to be expected since the hole mobility is about 100 times smaller than the electron mobility [24] in Alq 3 .…”

Section: B Organic Magnetoresistance In Small Molecule Devicesmentioning

confidence: 99%

Large magnetoresistance in nonmagneticπ-conjugated semiconductor thin film devices

et al. 2005

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Following the recent discovery of large magnetoresistance at room temperature in polyfluorence sandwich devices, we have performed a comprehensive magnetoresistance study on a set of organic semiconductor sandwich devices made from different pi-conjugated polymers and small molecules. The measurements were performed at different temperatures, ranging from 10K to 300K, and at magnetic fields, B < 100mT . We observed large negative or positive magnetoresistance (up to 10% at 300K and 10mT) depending on material and device operating conditions. We compare the results obtained in devices made from different materials with the goal of providing a comprehensive picture of the experimental data. We discuss our results in the framework of known magnetoresistance mechanisms and find that none of the existing models can explain our results.

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Section: B Organic Magnetoresistance In Small Molecule Devicesmentioning

confidence: 99%

Large magnetoresistance in nonmagneticπ-conjugated semiconductor thin film devices

et al. 2005

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“…This form for the mobility has been seen in time of flight measurements on conjugated organic materials, and has been derived theoretically. [13][14][15][16][17][18][19] It has been directly seen in time of flight measurements of MEH-PPV. 20 The device fabrication has been described previously.…”

Section: Introductionmentioning

confidence: 99%

Device physics of single layer organic light-emitting diodes

Crone

Campbell

Davids

et al. 1999

Journal of Applied Physics

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We present experimental and device model results for electron only, hole only, and bipolar organic light-emitting diodes fabricated using a soluble poly ͑p-phenylene vinylene͒ based polymer. Current-voltage (I -V) characteristics were measured for a series of electron only devices in which the polymer thickness was varied. The I -V curves were described using a device model from which the electron mobility parameters were extracted. Similarly, the hole mobility parameters were extracted using a device model description of I -V characteristics for a series of hole only devices where the barrier to hole injection was varied by appropriate choices of hole injecting electrode. The electron and hole mobilities extracted from the single carrier devices are then used, without additional adjustable parameters, to describe the measured current-voltage characteristics of a series of bipolar devices where both the device thickness and contacts were varied. The model successfully describes the I -V characteristics of single carrier and bipolar devices as a function of polymer thickness and for structures that are contact limited, space charge limited, and for cases in between. We find qualitative agreement between the device model and measured external luminance for a thickness series of devices. We investigate the sensitivity of the device model calculations to the magnitude of the bimolecular recombination rate prefactor.

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“…When a positive voltage was applied for these devices, the bright green electroluminescence of Alq 3 was observed with an emission maximum at around 520 nm. [25,26] This implies that the hole mobility in the HTL of 8-10 was fully sufficient for an effective charge carrier recombination occurring within the Alq 3 layer. An exciplex formation at the interface between HTL and Alq 3 layer was not observed after several minutes of the operation of the devices.…”

Section: Resultsmentioning

confidence: 98%

Polyethers containing 3,6-diarylcarbazolyl groups as polymeric materials for hole transporting layers of OLEDs

Kručaitė

Liu

Volyniuk

et al. 2015

Designed Monomers and Polymers

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Several polyethers containing pendent 3,6-diarylcarbazolyl moieties have been synthesized by the multi-step synthetic routes. Full characterization of their structures is presented. The polymers represent materials of high thermal stability with initial thermal degradation temperatures exceeding 419°C. The glass transition temperatures of the amorphous materials were in the range of 66-108°C. The electron photoemission spectra of thin layers of the polymers showed ionization potentials in the range of 5.47-5.69 eV. Hole transporting properties of the polymeric materials were tested in the structures of organic light emitting diodes with Alq 3 as the green emitter. The device containing hole transporting layers of the polymer with 3,6-di(4-biphenyl)carbazolyl moieties exhibited the best overall performance with a maximum photometric efficiency of about 2.3 cd/A and maximum brightness exceeding 2630 cd/m 2 .

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Electron and hole mobility in tris(8-hydroxyquinolinolato-N1,O8) aluminum

Cited by 412 publications

References 0 publications

Large magnetoresistance in nonmagneticπ-conjugated semiconductor thin film devices

Large magnetoresistance in nonmagneticπ-conjugated semiconductor thin film devices

Device physics of single layer organic light-emitting diodes

Polyethers containing 3,6-diarylcarbazolyl groups as polymeric materials for hole transporting layers of OLEDs

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