Electron-active silicon oxidation

Young, E. M.

doi:10.1007/bf00615932

Cited by 36 publications

(16 citation statements)

References 19 publications

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“…Although experiments in [17] were done for a different sample material and at different experimental conditions, we note that same processes (e.g. electron attachment to oxygen [5]) may also activate the anode oxidation in our experiments.…”

Section: Resultsmentioning

confidence: 99%

Modification of GaAs surface by low-current Townsend discharge

Gurevich¹,

Kittel²,

Hergenröder³

et al. 2010

J. Phys. D: Appl. Phys.

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Abstract. Influence of stationary spatially-homogeneous Townsend discharge on the (100) surface of semi-insulating GaAs samples is studied. Samples exposed to both electrons and ions in nitrogen discharge at the current density j=60 µA/cm 2 are studied by means of X-ray photoelectron spectroscopy, ellipsometry and atomic force microscopy. It is shown that exposure to low-energy ions (< 1 eV) changes crystal structure of the semiconductor on the depth up to 10-20 nm, although the stoichiometric composition does not change. The exposure to low-energy electrons (< 10 eV) forms an oxide layer, which is 5-10 nm thick. Atomic force microscopy demonstrates that the change in the surface potential of the samples may exceed 100 mV, for the both discharge polarities, while the surface roughness does not increase.

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Section: Resultsmentioning

confidence: 99%

Modification of GaAs surface by low-current Townsend discharge

Gurevich¹,

Kittel²,

Hergenröder³

et al. 2010

J. Phys. D: Appl. Phys.

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“…It is well known that absorption of high-energy photons creates highly energetic electrons in the conduction band of the semiconductor, which can tunnel through the thin oxide layer and reach the surface, where they are captured by atomic oxygen. 23,24 However, this effect can only explain the enhancement of the semiconductor-oxidation rate. The trapping of Ge during SiGe-oxidation experiments has been explained by a competition between the oxidant flux from the surface and the Si atoms flux from the substrate: 5,6,[9][10][11][12] as long as the flux of Si atoms is equal or greater than the oxidant flux, the grown oxide layer will contain only SiO 2 , while all Ge atoms will be segregated from this newly formed oxide layer.…”

Section: Resultsmentioning

confidence: 97%

Photonic effects during low-temperature ultraviolet-assisted oxidation of SiGe

Crăciun

Singh

Boyd

2002

Journal of Elec Materi

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“…The oxidation of semiconductors under the above-band irradiation occurs according to the electron-active photooxidation model which suggests the dissociation of molecular oxygen into more active atomic oxygen under the influence of excited charge carriers of QDs [16, 17]. The effect of quantum dot photooxidation has been studied mostly on the CdSe nanocrystals.…”

Section: Introductionmentioning

confidence: 99%

Influence of the Shell Thickness and Ratio Between Core Elements on Photostability of the CdTe/CdS Core/Shell Quantum Dots Embedded in a Polymer Matrix

2016

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This paper reports a study of photooxidation and photomodification processes of the CdTe/CdS quantum dots embedded in a polymer matrix under ambient condition. During the first few minutes of irradiation, the quasi-inverse increase in photoluminescence intensity has been observed indicating the passivation of the nanocrystal surface traps by water molecules. A prolonged irradiation of the polymer film containing CdTe/CdS quantum dots leads to a significant decrease in the photoluminescence intensity together with the “blue shift” of the photoluminescence peak energy associated with quantum dot photooxidation. The mechanisms of the CdTe/CdS core/shell quantum dot photooxidation and photomodification in a polymer matrix are discussed. We have found a correlation between the photostability of the quantum dots and the CdS shell thickness as well as the ratio of core elements.

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Electron-active silicon oxidation

Cited by 36 publications

References 19 publications

Modification of GaAs surface by low-current Townsend discharge

Modification of GaAs surface by low-current Townsend discharge

Photonic effects during low-temperature ultraviolet-assisted oxidation of SiGe

Influence of the Shell Thickness and Ratio Between Core Elements on Photostability of the CdTe/CdS Core/Shell Quantum Dots Embedded in a Polymer Matrix

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