Electromodulation Spectroscopy of Semiconductor Surfaces and Interfaces

Pollak, Fred H.

doi:10.1016/b978-0-444-82198-0.50012-6

Cited by 3 publications

(1 citation statement)

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“…This can easily be accomplished by periodically modulating some parameter applied to the sample, such as an electric field (electromodulation spectroscopy including contact and contractless modes), temperature (thermomodulation spectroscopy) and stress (piezomodulation spectroscopy). This kind of modulation spectroscopy belongs to 'external' modulation [55][56][57][58][59][60]. The change can also occur if we periodically modulate the wavelength [61] or polarization condition [62,63].…”

Section: Basics Foundations Of Thermoreflectance Spectroscopymentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

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Section: Basics Foundations Of Thermoreflectance Spectroscopymentioning

confidence: 99%

Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

Pierścińska

2017

J. Phys. D: Appl. Phys.

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Study of semiconductor surfaces and interfaces using electromodulation

Pollak

2001

Surface & Interface Analysis

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The modulation spectroscopy technique of electromodulation (EM) is a major tool for the study and characterization of a number of semiconductor surfaces/interfaces and also for the evaluation of processinduced damage at surfaces. The most useful forms of EM are photoreflectance (PR) and contactless electroreflectance (CER) because they are sensitive to surface/interface electric fields and often yield the sharpest structure (third-derivative lineshape of the unmodulated spectrum in the case of bulk/thin-film material). For sufficiently high electric fields the PR/CER spectra may exhibit Franz-Keldysh oscillations, which are a direct measure of the relevant electric field. Furthermore, PR and CER require no special mounting of the sample and hence can be employed in situ (PR) or non-destructively on wafer-sized material. This article will discuss some recent applications of PR/CER for the investigation of a number of surfaces/interfaces, such as: process-induced effects on the surface of Si; Fermi-level pinning on a number of III-V materials, including low-temperature-grown GaAs (with excess As) and wurtzite GaN; Schottky barrier formation; process-induced damage (sputtering, reactive ion etching, chemically assisted ion beam etching) on III-V materials; homojunctions (GaAs/GaAs); heterojunctions (GaAlAs/GaAs, ZnSe/GaAs, CdTe/GaAs, AlInAs/InP, InGaAs/InP, InGaAs/InAlAs and wurtzite InGaN/GaN); and device structures such as heterojunction bipolar transistors and pseudomorphic high-electron-mobility transistors. A number of these studies have been performed in situ with an ultrahigh vacuum environment.

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