Electromigration reliability issues in dual-damascene Cu interconnections

Ogawa, Ennis T.; Lee, Ki‐Don; Blaschke, V.; Ho, Paul S.

doi:10.1109/tr.2002.804737

Cited by 259 publications

(108 citation statements)

References 180 publications

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“…For the structures analyzed in this study, the major EM diffusion path appears to be the interface between Cu and the SiN x passivation layer [Hu 1999, Arnaud 1999, Hau-Riege 2001, Ogawa 2002b, Meyer 2002, Hauschildt 2004a, Hauschildt 2004b. Most studies infer the dominant diffusion path by analyzing the influence of varying process parameters on the EM behavior, such as line cross-section or Cu microstructure.…”

Section: Details Of the Em-induced Diffusion Mechanism In Cu Linesmentioning

confidence: 99%

“…With continuing void growth, the line resistance increases, eventually leading to failure of the line. The corresponding failure times usually follow a lognormal distribution with the median lifetime depending on the quality of the interface, which controls the mass transport [Hu 1999, Arnaud 2000, Hau-Riege 2001, Ogawa 2002b, Meyer 2002, Hauschildt 2004a, Hauschildt 2004b. Since EM experiments are conducted at higher current densities and temperatures compared to operating conditions, extrapolations are needed to assess reliability at operating conditions.…”

Section: Chapter 1: Introductionmentioning

confidence: 99%

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Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Hauschildt

Gall²,

Thrasher³

et al. 2004

MRS Proc.

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Electromigration (EM) failure statistics and the origin of the lognormal deviation (σ) for Cu interconnects have been investigated by analyzing the lifetime statistics and void size distributions at various stages during EM testing. Experiments were performed on 0.18 μm wide Cu interconnects with tests terminated after specific amounts of resistance increases, or after a specified test time. Void size distributions of resistance-based, as well as time-based EM tests were obtained using focused ion beam (FIB) microscopy. The lifetime and void size distributions were found to follow lognormal distribution functions. The σ values of EM lifetime and time-based void size distributions decrease with higher percentages of resistance increase, reaching an asymptotic value of σ ∼ 0.14. In contrast, σ values of resistance-based void size distributions are significantly smaller and do not show an obvious dependence on time. The statistics of resistance-based void size distributions can mainly be accounted for by geometrical variations of the void shape, while the statistics of time-based void size distributions requires consideration of kinetic aspects of the EM process. The σ values of EM lifetime distributions at long times can be simulated based on measured void size distributions, taking into account geometrical and experimental factors of EM. In contrast, for short times the statistics of initial void formation and the kinetics of interfacial mass transport have to be considered.

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Section: Details Of the Em-induced Diffusion Mechanism In Cu Linesmentioning

confidence: 99%

Section: Chapter 1: Introductionmentioning

confidence: 99%

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Hauschildt

Gall²,

Thrasher³

et al. 2004

MRS Proc.

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“…Electromigration poses many challenges to materials science and technology, as many aspects remain unclear and hence reliability estimations are often made on the basis of a phenomenological approach. The physics of electromigration has been extensively studied, from the atom transport mechanism, to interface and grain boundary aspects, to the mechanical aspects of passivated structures [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…The current opinion [2,4,9] tend to emphasize the role of surface and interface diffusion, but many questions about the fastest EM pathway remain open. Copper interconnections EM behavior is strongly dependent on deposition technology and conditions, and a transition from ''finegrained" to ''bamboo" behavior, a feature suggesting grain boundary EM, can show up for some deposition technology (CVD see [6]).…”

Section: Introductionmentioning

confidence: 99%

Noise and reliability in simulated thin metal films

Pascoli

Iannaccone

2008

Microelectronics Reliability

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a b s t r a c tMany macroscopic aspects of electromigration damage in thin metal films have been investigated by means of Monte Carlo simulations based on simplified physical model. The employed model, can be described as a middle-scale model, in which the physical system is modeled with a high level of abstraction, without a detailed atomic physical model of the system.Among the many effects of the electromigration phenomenon, the simulator has been used to investigate several statistical properties of electromigration failure and the noise behaviour.Notwithstanding this simplicity, it is able to generate results in good agreement with many experimental observations: the lognormal distribution of failures, dependence of the mean time to failure from stress current and film geometry, Black exponent, noise statistics.Furthermore, this simulations confirmed a significant correlation between electromigration noise in the initial phase of stress and time to failure which has been suggested by a few experimentalists. This correlation can be usefully exploited as an early indication of the onset of electromigration damage on a per-sample basis.

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“…significantly enhance aluminum interconnect electromigration through reducing 3 grain boundary diffusivity (Lloyd and Clement 1995;Ogawa et al 2002). Also for eutectic solder, with the unstable lamella structure changes, the diffusion will change from interface diffusion to regular polycrystalline materials(Gupta et al…”

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confidence: 99%

Nearshore Birds in Puget Sound

Buchanan¹

2006

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Electromigration reliability issues in dual-damascene Cu interconnections

Cited by 259 publications

References 180 publications

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Statistical Analysis of Electromigration Lifetimes and Void Evolution for Cu Interconnects

Noise and reliability in simulated thin metal films

Nearshore Birds in Puget Sound

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