Electromigration induced incubation, drift and threshold in single-damascene copper interconnects

Yokogawa, Shinji; Takizawa, H.

doi:10.1109/iitc.2002.1014909

Cited by 5 publications

(1 citation statement)

References 10 publications

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“…It is reported that drift velocity of Cu damascene interconnects with dielectric diffusion barrier SiN x by Kawasaki-Hu method. 9,10) It is calculated to be approximately 8.7 nm/h at 325 C, taking the effects of the thickness of the Cu line and the applied current density into account in the case of Cu damascene interconnects with the dielectric diffusion barrier of SiN x . This value is on the same order as that of the samples with the NH 3 plasma treatment.…”

Section: Em Resultsmentioning

confidence: 99%

Effect of Plasma Treatment and Dielectric Diffusion Barrier on Electromigration Performance of Copper Damascene Interconnects

Usui

Miyajima

Masuda

et al. 2006

jjap

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The effect of plasma treatment and a dielectric diffusion barrier on electromigration (EM) performance was examined. The characteristics and adhesion properties at the interface between copper (Cu) and the dielectric diffusion barrier were also investigated by scanning transmission electron microscopy–electron energy loss spectrometry (STEM–EELS). The existence of oxygen at the interface after hydrogen (H2) plasma treatment, which has a large pre-exponential factor, causes a large EM drift velocity. Ammonium (NH3) plasma treatment can reduce the Cu oxide completely, resulting in an improvement in EM performance. On the other hand, the dielectric diffusion barrier of SiCxNy, which has a better adhesion property then SiCx, reduces EM drift velocity and provides a larger activation energy. The reduction of CuOx completely by plasma treatment is essential and the selection of dielectric diffusion barrier is important to improve the EM performance of Cu damascene interconnects.

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Section: Em Resultsmentioning

confidence: 99%