Electromigration in the dissipative state of high-temperature superconducting bridges

Baumans, Xavier; Fernández‐Rodríguez, Alejandro; Mestres, N.; Collienne, Simon; Vondel, J. Van de; Palau, Anna; Silhanek, Alejandro

doi:10.1063/1.5063797

Cited by 7 publications

(10 citation statements)

References 27 publications

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“…One particularly appealing aspect that could situate voltage-controlled electromigration as a privileged tool of choice for tuning the oxygen content is the possibility to heal a previously electromigrated sample, by simply inverting the direction of the electrical drive (antielectromigration). Although this technique seems to work fairly well for elemental materials, − its success in YBCO has been shown to be rather limited . In order to illustrate this effect, starting from the EM sample (inset of Figure b) we invert the polarity of the voltage in such a way that now the right bridge corresponds to the cathode side and the left bridge to the anode side.…”

Section: Results and Discussionmentioning

confidence: 99%

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

et al. 2020

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The last years have witnessed major advancements in all-electrical doping control on cuprates. In the vast majority of cases, the tuning of charge carrier density has been achieved via electric eld eect by means of either a ferroelectric polarization or by using a dielectric or electrolyte gating. Unfortunately, these approaches are constrained to rather thin superconducting layers and require large electric elds in order 1 to ensure sizable carrier modulations. In this work, we focus on the investigation of oxygen doping in an extended region through current-stimulated oxygen migration in YBa 2 Cu 3 O 7−δ superconducting bridges. The underlying methodology is rather simple and avoiding sophisticated nanofabrication process steps and complex electronics. A patterned multiterminal transport bridge conguration allows us to electrically assess the directional counterow of oxygen atoms and vacancies. Importantly, the emerging propagating front of current-dependent doping δ is probed in situ by optical microscopy and scanning electron microscopy. The resulting imaging techniques, together with photo-induced conductivity and Raman scattering investigations reveal an inhomogeneous oxygen vacancy distribution with a controllable propagation speed permitting us to estimate the oxygen diusivity. These ndings provide direct evidence that the microscopic mechanism at play in electrical doping of cuprates involves diusion of oxygen atoms with the applied current. The resulting ne control of the oxygen content would permit a systematic study of complex phase diagrams and the design of electrically addressable devices.

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Section: Results and Discussionmentioning

confidence: 99%

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

et al. 2020

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“…A resistance R max is measured at the top of the excitation pulse starting 1 ms after the rising edge of the pulse, and a resistance R min is recorded at the top of the probe pulse. A similar protocol has been used in [15,33]. At low I max values, R max ≈R min (see figure 2).…”

Section: Measurement Protocol and Criterion For Em Breakdownmentioning

confidence: 99%

“…Later on, Schirm and co-authors [30] used EM to toggle the conductance of an aluminum atomic contact between two well-defined values in the range of a few conductance quanta. More recently, the concept of EM-stimulated resistance switching has been applied to cluster-assembled gold films by Minnai et al [31] and remains a promising approach in current-controlled oxygen doping in YBa 2 Cu 3 O 7−δ [32,33]. Interestingly, the threshold logic implemented by memristive devices permits to emulate synaptic actions in which the memristance of the device can be incrementally modified and a thresholding system governs the firing of the output [34,35].…”

Section: Introductionmentioning

confidence: 99%

Electromigration-induced resistance switching in indented Al microstrips

et al. 2019

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Non-volatile resistive memory cells are promising candidates to tremendously impact the further development of Boolean and neuromorphic computing. In particular, nanoscale memory-bit cells based on electromigration (EM)-induced resistive switching in monolithic metallic structures have been identified as an appealing and competitive alternative to achieve ultrahigh density while keeping straightforward manufacturing processes. In this work, we investigate the EM-induced resistance switching in indented Al microstrips. In order to guarantee a large switching endurance, we limited the on-to-off ratio to a minimum readable value. Two switching protocols were tested, (i) a variable current pulse amplitude adjusted to ensure a precise change of resistance, and (ii) a fixed current pulse amplitude. Both approaches exhibit an initial training period where the mean value of the device's resistance drifts in time, followed by a more stable behavior. Electron microscopy imaging of the devices show irreversible changes of the material properties from the early stages of the switching process. High and low resistance states show retention times of days and endurances of ∼10 3 switching cycles.

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“…Such control can be achieved electrically, via the application of currents or voltages. One of the possible oxygen-control approach consists of circulating large current densities, as reported in thin films and nanoconstrictions [30][31][32][33][34][35]. In these experiments, it was shown that a sufficiently large current (typically above 7 MA • cm −2 ) [33][34][35][36] can produce direct electromigration of the different atomic species.…”

Section: Introductionmentioning

confidence: 99%

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

Lagarrigue,

de Dios,

Carreira

et al. 2024

Supercond. Sci. Technol.

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Cuprate superconductors are highly sensitive to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a memristive device based on the high-TC superconductor YBa2Cu3O7-x (YBCO), in which local changes of the oxygen content and induced disorder are exploited to produce memory effects. These effects are triggered electrically in a three-terminal device whose structure is reminiscent of a transistor, consisting of a YBCO channel and an Al gate. The Al/YBCO interface, which controls the gate conductance, displays a giant, bipolar, reversible switching across a continuum of non-volatile conductance states spanning over two decades. This phenomenon is controlled by the gate voltage magnitude and is caused by the oxygen exchange between YBCO and Al. Concomitantly, the channel shows a gradual, irreversible superconductor-to-insulator transition that retains a memory of the power dissipated in the device, and can be explained by induced bulk disorder. The observed effects, and the understanding of the interplay between the underlying mechanisms, constitute interesting ingredients for the design and realization of novel memristors and switches for superconducting electronics.

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Electromigration in the dissipative state of high-temperature superconducting bridges

Abstract: Increased energy efficiency spin-torque switching of magnetic tunnel junction devices with a higher order perpendicular magnetic anisotropy Applied Physics Letters 114, 012404 (2019);

Cited by 7 publications

References 27 publications

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

Electromigration-induced resistance switching in indented Al microstrips

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure

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Electromigration in the dissipative state of high-temperature superconducting bridges

Abstract: Increased energy efficiency spin-torque switching of magnetic tunnel junction devices with a higher order perpendicular magnetic anisotropy Applied Physics Letters 114, 012404 (2019);

Cited by 7 publications

References 27 publications

Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7−δ Thin Films

Direct Visualization of Current-Stimulated Oxygen Migration in YBa2Cu3O7−δ Thin Films

Electromigration-induced resistance switching in indented Al microstrips

Memristive effects in YBa2Cu3O7-x devices with transistor-like structure

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Product

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Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

Direct Visualization of Current-Stimulated Oxygen Migration in YBa₂Cu₃O_7−δ Thin Films

Memristive effects in YBa₂Cu₃O_7-x devices with transistor-like structure