Electromigration in Pb‐Free Solder Joints in Electronic Packaging

Chen, Chih; Liang, S. W.; Chang, Yuan; Hsiao, Hsiang Yao; Han, Jung Kyu; Tu, King‐Ning

doi:10.1002/9781119966203.ch15

Cited by 2 publications

(2 citation statements)

References 82 publications

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“…The reason is that in larger solders it appears that since there was no Pd-Sn IMC formed ahead of the interface, the Cu-Ni-Sn IMC is able to grow relatively faster than in smaller solders. Besides that, it was believed that the dissolution phenomena of metals involved in the interfacial reactions are dependent on the ratio of solder volume to contact pad area (V/A) [15]. Schaefer et al [16] explained with an increase in this V/A ratio the diffusion distance for Cu to saturate the liquid solder increases, thus resulting in slower interfacial reactions.…”

Section: Resultsmentioning

confidence: 99%

Effect of Solder Volume on Interfacial Reaction between SAC405 Solders and EN(B)EPIG Surface Finish

Azlina

Ourdjini

Amrin

et al. 2013

AMR

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Abstract. The electronic packaging industry is now being driven towards smaller, lighter, and thinner electronic products but with higher performance and more functions. Thus, smaller solder ball sizes are needed for fine solder joint interconnections to fulfill these requirements. This study investigates the interfacial reactions during reflow soldering and isothermal aging between Sn-4.OAg-0.5Cu (SAC405) and electroless nickel (boron)/ immersion palladium/immersion gold (EN(B)EPIG). Reliability of solder joint has also been investigated by performing solid state isothermal aging at 125°C for up to 2000 hours. The results revealed that after reflow soldering, (Cu, Ni)6Sns IMC is formed between solder and substrate while after aging treatment another IMC was found between (Cu, Ni)sSn5 and substrate known as (Ni, Cu)3Sn4. Aging time of solder joints resulted in an increase in IMC thickness and a change in morphology into more spherical, dense and with larger grain size. By using optical microscope, the average thickness of the intermetallics was measured and it found that the larger solder balls produced thicker IMC than the smaller solder balls during reflow soldering. However, after aging the smaller solders produced thicker IMC than the larger solders.

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Section: Resultsmentioning

confidence: 99%

Effect of Solder Volume on Interfacial Reaction between SAC405 Solders and EN(B)EPIG Surface Finish

Azlina

Ourdjini

Amrin

et al. 2013

AMR

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show abstract

“…Electromigration (EM)-induced degradation is another critical issue in interconnects due to rapid scaling and the increased current stressing of the devices [24][25][26]. Common EM failures in solder interconnects includes void formation and under-bumpmetallization (UBM) dissolution which may result in a rapid increase in resistance and finally cause open failure [27,28].…”

Section: Introductionmentioning

confidence: 99%

Recrystallization and Grain Growth in Cu-Cu Joints under Electromigration at Low Temperatures

Yang,

Tran,

Chen

2023

Materials

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The behavior of recrystallization and grain growth was examined in Cu-Cu joints during electromigration at 150 °C. Recrystallization and grain growth were observed in all the joints after electromigration for 9000 h. Voiding was formed in Cu current-feeding lines and in bonding interfaces, and resistance increased with time due to the void formation. However, instead of rising abruptly, the resistance of certain Cu joints dropped after 7000 h. Microstructural analysis revealed that a large grain growth occurred in these joints at 150 °C, and the bonding interface was eliminated. Therefore, the electromigration lifetime can be prolonged for these joints.

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Electromigration in Pb‐Free Solder Joints in Electronic Packaging

Cited by 2 publications

References 82 publications

Effect of Solder Volume on Interfacial Reaction between SAC405 Solders and EN(B)EPIG Surface Finish

Effect of Solder Volume on Interfacial Reaction between SAC405 Solders and EN(B)EPIG Surface Finish

Recrystallization and Grain Growth in Cu-Cu Joints under Electromigration at Low Temperatures

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