Electromigration in layered Al lines studied by in-situ ultra-high voltage electron microscopy

Mori, Hirotarô; Okabayashi, Hirofumi; Komatsu, Masaaki

doi:10.1016/s0040-6090(96)09517-x

Cited by 15 publications

(5 citation statements)

References 5 publications

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“…Although such electrical in situ TEM techniques were demonstrated in as early as 1960s when Blech and Meieran were passing a direct current (dc) electrical current through an Al thin film to observe the electromigration process, 1 there are only a handful of publications based on this technique at this time. Most of them are studies on the electromigration in interconnecting lines [1][2][3][4][5] and the domain switching in ferroelectrics. [6][7][8][9][10][11] Recently, the application of this technique has been expanded to studies of other phenomena, such as the failure mechanism of solid electrolytes, 12 the breakdown of grain boundary conducting barrier, 13 and the mechanical fatigue of metallic thin films.…”

Section: Introductionmentioning

confidence: 99%

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics

Tan

Shang

2005

J. Mater. Res.

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High electric fields were delivered to specimens during imaging in the transmission electron microscopy (TEM) chamber to reveal details of electric field-induced phenomena in ferroelectric oxides. These include the polarization switching in nanometer-sized ferroelectric domains and the grain boundary cavitation in a commercial lead zirconate titanate (PZT) polycrystalline ceramic, the domain wall fracture in a Pb(Mg 1/ 3 Nb 2/3 )O 3 -PbTiO 3 single crystal, and the transformation of incommensurate modulations in Pb 0.99 Nb 0.02 [(Zr 1−x Sn x ) 1−y Ti y ] 0.98 O 3 (PZST100x/100y/2) polycrystalline ceramics. In the PZT ceramic, a cavitation process was uncovered for the electric field-induced intergranular fracture. In the ferroelectric single crystal, a preexisting crack was observed to deflect and to follow a 90° domain wall, indicating the presence of severe incompatible piezoelectric strains at thedomain wall. In the antiferroelectric PZST ceramics, the electric field-induced antiferroelectric-to-ferroelectric phase transformation was accompanied with the disappearance of incommensurate modulations. High electric fields were delivered to specimens during imaging in the transmission electron microscopy (TEM) chamber to reveal details of electric field-induced phenomena in ferroelectric oxides. These include the polarization switching in nanometer-sized ferroelectric domains and the grain boundary cavitation in a commercial lead zirconate titanate (PZT) polycrystalline ceramic, the domain wall fracture in a /2) polycrystalline ceramics. In the PZT ceramic, a cavitation process was uncovered for the electric field-induced intergranular fracture. In the ferroelectric single crystal, a preexisting crack was observed to deflect and to follow a 90°domain wall, indicating the presence of severe incompatible piezoelectric strains at the domain wall. In the antiferroelectric PZST ceramics, the electric field-induced antiferroelectric-to-ferroelectric phase transformation was accompanied with the disappearance of incommensurate modulations.

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Section: Introductionmentioning

confidence: 99%

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics

Tan

Shang

2005

J. Mater. Res.

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“…The depletion of atoms on the other side of the Al line indicates that the line has been disconnected. [24][25][26] In Fig. 7c, the atom accumulation region is marked ''þ a ,'' and the other side marked ''þ b '' is assumed to be the depleted region.…”

Section: Resultsmentioning

confidence: 99%

Interfacial Reaction Effect on Electrical Reliability of Cu Pillar/Sn Bumps

Jeong

Lim

Kim

et al. 2010

Journal of Elec Materi

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Thermal annealing and electromigration (EM) tests were performed with Cu pillar/Sn bumps to understand the growth mechanism of intermetallic compounds (IMCs). Annealing tests were carried out at both 100°C and 150°C. At 150°C, EM tests were performed using a current density of 3.5 9 10 4 A/cm 2 . The electrical failure mechanism of the Cu pillar/Sn bumps was also investigated. Cu 3 Sn formed and grew at the Cu pillar/Cu 6 Sn 5 interface with increasing annealing and current-stressing times. The growth mechanism of the total (Cu 6 Sn 5 + Cu 3 Sn) IMC changed when the Sn phase in the Cu pillar/ Sn bump was exhausted. The time required for complete consumption of the Sn phase was shorter during the EM test than in the annealing test. Both IMC growth and phase transition from Cu 6 Sn 5 to Cu 3 Sn had little impact on the electrical resistance of the whole interconnect system during current stressing. Electrical open failure in the Al interconnect near the chip-side Cu pillar edge implies that the Cu pillar/Sn bump has excellent electrical reliability compared with the conventional solder bump.

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“…11 The driving force for the former depends on the gradient of hydrostatic stress, whereas for the latter it depends on the electron flow. Recently, various kinds of metallic NSs, such as Cu, 6 Sn, 7,8 and Al, [12][13][14] have been fabricated utilizing these phenomena.…”

Section: Introductionmentioning

confidence: 99%

A Numerical Simulation of Nanostructure Formation Utilizing Electromigration

Sasagawa

Fukushi

Sun

et al. 2009

Journal of Elec Materi

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A numerical method to simulate nanostructure formation due to electromigration in passivated Al specimens is developed based on the governing parameter for electromigration damage, AFD Ã gen : The nanostructure formation is influenced by conditions such as the current density and substrate temperature. The results of the simulations are verified through experiments, and good agreement between the simulations and experiments is found for changes in nanostructure volume. The simulation is expected to be useful for identifying effective conditions for nanostructure formation.

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Electromigration in layered Al lines studied by in-situ ultra-high voltage electron microscopy

Cited by 15 publications

References 5 publications

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics

In situ Transmission Electron Microscopy Studies of Electric-field-induced Phenomena in Ferroelectrics

Interfacial Reaction Effect on Electrical Reliability of Cu Pillar/Sn Bumps

A Numerical Simulation of Nanostructure Formation Utilizing Electromigration

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