Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

Electromigration-induced formation of percolating adsorbate islands during condensation from the gaseous phase: a computational study

“…In order to test the parameter space used in our numerical simulations to offer a guidance for designing the corresponding experiments to observe patterns like the ones predicted by simulations we use the data from [78] for the system Ge on SiO 2 at T = 773 K: activation energy for desorption E d ≃ 0.44 eV and 3b, and the transverse size of elongated structures at D em ≠ 0, shown in Figure 6a, are about 2L D ≃ 100 nm. This is in good agreement with the experimental results discussed in [15,78].…”

“…Reorganization of the step structure of the adsorbate islands was observed on silicon substrates [ 12 – 13 ]. Strong effects of EM were manifested in the processes of evolution of vanadium surface morphology [ 14 ], and in the epitaxial growth of semiconductor heterostructures [ 15 ]. It was found that at low deposition temperatures the growth of surface structures occurs according to the Stransky–Krastanov growth regime [ 16 – 19 ], whereas at elevated temperatures such processes are associated with the solid dissolution of the layers of precipitated material [ 20 – 21 ].…”

Dewetting behavior of Ge layers on SiO2 under annealing

“…Such behavior takes place in the structures of Ge/Si(100) 77 – 79 and Si(crystalline)/SiO 2 3 , 41 , 80 – 82 . The dewetting conditions may appear in the structure with the increasing elastic strain in it, as was observed when the thickness of Ge layers on Si(111) was increased at a given substrate temperature 83 . The surface layer energy calculations for the Ge/Si(100) structures showed that it has a gentle minimum as a function of the contact angle.…”

Ефекти Електроміграції При Епітаксіальному Рості Тонких Плівок: Моделювання Методом Фазового Поля

“…A reorganization of the step-like structure of adsorbate islands was observed on silicon substrates [7,8]. The strong electromigration effects manifested themselves in the processes of the vanadium surface morphology evolution [9] and the epitaxial growth of semiconductor heterostructures [10]. It was found that the surface structures grow according to the Stransky-Krastanov mode at low deposition temperatures [11][12][13][14].…”