Electromigration and Line R of Graphene Capped Cu Dual Damascene Interconnect

Nogami, Takeshi; Nguyen, S.; Huang, Huai; Lanzillo, Nicholas A.; Shobha, H.; Li, J.; Peethela, B.; Parbatani, A.; Schravendijk, B. van; Varadarajan, B.; Narkeviciute, I.; Srinivasan, E.; Sharma, K.K.; Knarr, R.; Schmitz, S.; Ramanan, V.; Edelstein, D.

doi:10.1109/iedm19574.2021.9720525

Cited by 5 publications

(2 citation statements)

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“…One of them is the study of a 2D-like barrier. The approach is to minimize the volume fraction of Cu occupied by the barrier by replacing the thick Ta or TaN barrier with 2D-like materials such as graphene [88,89], MoS 2 [41,90], TaS 2 [41], and WSe 2 [41].…”

Section: Electromigrationmentioning

confidence: 99%

Recent Trends in Copper Metallization

Kim

2022

Electronics

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The Cu/low-k damascene process was introduced to alleviate the increase in the RC delay of Al/SiO2 interconnects, but now that the technology generation has reached 1× nm or lower, a number of limitations have become apparent. Due to the integration limit of low-k materials, the increase in the RC delay due to scaling can only be suppressed through metallization. As a result, various metallization methods have been proposed, including traditional barrier/liner thickness scaling, and new materials and integration schemes have been developed. This paper introduces these methods and summarizes the recent trends in metallization. It also includes a brief introduction to the Cu damascene process, an explanation of why the low-k approach faces limitations, and a discussion of the measures of reliability (electromigration and time-dependent dielectric breakdown) that are essential for all validation schemes.

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Section: Electromigrationmentioning

confidence: 99%

Recent Trends in Copper Metallization

Kim

2022

Electronics

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“…Because metals with higher melting points can withstand higher current densities, cobalt (Co) and ruthenium (Ru) are promising candidate materials for next-generation interconnects under various considerations. − On the other hand, graphene is known for its excellent properties, including high electrical and thermal conductivity and impermeability to protect metals from reactive chemicals or gaseous species. − Such properties make graphene an ideal barrier for metal interconnects. , Extensive research in recent years has confirmed that the deposition of graphene on copper interconnects can reduce surface scattering of the metal, enhance conductivity, and improve electromigration lifetime. − Surface scattering of metals has been fitted using the Fuchs–Sondheimer and Mayadas–Shatzkes models, and the corresponding results indicate that graphene can reduce surface scattering and significantly enhance the conductivity of copper interconnects . However, to directly apply graphene to interconnects in semiconductor back-end-of-line (BEOL) processes, the low-temperature growth of graphene remains a major challenge.…”

Section: Introductionmentioning

confidence: 99%

Improving the Electromigration Life of Advanced Interconnects through Graphene Capping

Huang

Tsao

Chang

et al. 2023

ACS Appl. Nano Mater.

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Since the discovery of graphene, 2D materials are establishing a rapidly growing and promising field, with great potential for diverse applications given their excellent conductivity and high transparency. In particular, graphene can isolate external chemical reactions when applied to back-end-of-line (BEOL) interconnect metals, thereby preventing the oxidation of the interconnect metals. In addition, it can improve the conductivity and breakdown current density of interconnects. However, the thermal budget remains an important problem in BEOL interconnects. We demonstrate an advanced graphene deposition method using an in-house plasma plasma-enhanced chemical vapor deposition system, which offers low thermal budget and high stability. We also optimize carbon precursors to improve the quality of graphene on Ru and Co thin films. We show the improvement of electrical conductivity, electromigration lifetime, and maximum breakdown current density after capping Ru and Co interconnects with graphene. The electromigration lifetimes of the Ru and Co interconnects increase by 4 and 4.5 times, respectively, and their maximum breakdown current density increases by 17.6 and 10.6%, respectively. The results show that capping with graphene has a high potential in BEOL applications.

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