Electromechanical Reliability Testing of Flexible Hybrid Electronics Incorporating FleX Silicon-On-Polymer Ics

Leber, Darrell E.; Meek, Brian N.; Leija, Seth D.; Wilson, Dale G.; Chaney, Richard L.; Hackler, D.

doi:10.1109/wmed.2016.7458276

Cited by 18 publications

(7 citation statements)

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“…209 This work advanced the previous effort using single-crystal-Si MOSFETs in a 0.8 lm CMOS process with 20 lm thickness, bending on cylinders of radii of curvature down to 10 mm, 88 as shown in Fig. 13(f).…”

Section: Memory Cellsmentioning

confidence: 75%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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Electronics that conform to 3D surfaces are attracting wider attention from both academia and industry. The research in the field has, thus far, focused primarily on showcasing the efficacy of various materials and fabrication methods for electronic/sensing devices on flexible substrates. As the device response changes are bound to change with stresses induced by bending, the next step will be to develop the capacity to predict the response of flexible systems under various bending conditions. This paper comprehensively reviews the effects of bending on the response of devices on ultra-thin chips in terms of variations in electrical parameters such as mobility, threshold voltage, and device performance (static and dynamic). The discussion also includes variations in the device response due to crystal orientation, applied mechanics, band structure, and fabrication processes. Further, strategies for compensating or minimizing these bending-induced variations have been presented. Following the in-depth analysis, this paper proposes new mathematical relations to simulate and predict the device response under various bending conditions. These mathematical relations have also been used to develop new compact models that have been verified by comparing simulation results with the experimental values reported in the recent literature. These advances will enable next generation computer-aided-design tools to meet the future design needs in flexible electronics.

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Section: Memory Cellsmentioning

confidence: 75%

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Heidari

Wacker

Dahiya

2017

Applied Physics Reviews

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“…Belgium based imec has shown a variety of encapsulation techniques for ultra-thin silicon but they have never been able to demonstrate a full system [46]. USA based American Semiconductor sells some useful chips like microprocessors and analog-to-digital converter, but again they also have not shown a full system [47]. We are the only group who have shown a 3D architecture for fully functioning physically flexible standalone electronic system integrating sensors, actuators, power supply/storage and data management electronics (figures 9 and 10) [48][49][50].…”

Section: Advances In Science and Technology To Meet Challengesmentioning

confidence: 99%

The 2021 flexible and printed electronics roadmap

Bonnassieux¹,

Brabec²,

Cao³

et al. 2021

Flex. Print. Electron.

125

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“…than 30 µm including flexible package (PI encapsulation) and Si chips as thin as 5 µm have been achieved. [259,260] Figure 9f shows a photograph of a wafer scale ultrathin flexible CMOS circuits based on 130 nm node SOI technology. [31] A large variety of ICs including analog-to-digital converters, GHz RFID chips, sensor tag ICs, and low-power Bluetooth chips have been made into flexible form with this technology, [259] indicating the application potential in low-power applications like wireless sensing system, RFID tag, low-power wearable communication systems, and IoT.…”

Section: Circuit-first Approachmentioning

confidence: 99%

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

Zhang

Lan

Qiu

et al. 2020

Adv Materials Technologies

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2000759 (6 of 38) www.advmattechnol.de Figure 4. Flexible microwave transistors. a) Schematic illustration of fabrication process flow of flexible microwave TFTs based on Si nanomembrane. Left, two-step transfer-printing of Si nanomembrane on flexible substrate with assist of PDMS stamp. Right, direct flip-printing Si nanomembrane on flexible substrate. Reproduced with permission. [72] Copyright 2010, Wiley-VCH. b) Flexible microwave Si TFT using direct flip-printing approach in (a). Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [75] Copyright 2016, Springer Nature. c) Flexible microwave Si TFT using two-step approach in (a). Reproduced with permission. [72] Copyright 2010, Wiley-VCH. d) Cross-section SEM image of flexible Si MOSFET made by thinning a 65 nm node SOI wafer. Reproduced with permission. [45] Copyright 2013, American Institute of Physics. e) Optical images of flexible GaAs HBT on cellulose nanofibril (CNF) substrate. Reproduced under the terms of the Creative Commons Attribution 4.0 International License. [90] Copyright 2015, Springer Nature. f) Schematic illustration and normalized on-state conductance (G/G 0), maximum transconductance (g m /g m0) of flexible InAs MOSFET with self-aligned gate. Reproduced with permission. [53] Copyright 2012, American Chemical Society. g) Cross-section schematic illustration and gain curves of flexible InGaAs/InAlAs HEMT as function of frequency under various bending conditions. Reproduced with permission. [91] Copyright 2013, American Institute of Physics. h) Output power density (P OUT), power gain (G P) and power-added efficiency (PAE) of the flexible GaN HEMT on thermal conductive tape with thermal conductivity of 1.6 W m −1 K −1. Reproduced with permission. [92] Copyright 2017, Wiley-VCH. i) Photography of AlGaN/GaN film grown on BN coated sapphire substrate and printed on flexible tape. Reproduced with permission. [19] Copyright 2017, Wiley-VCH. j) Cross-section schematic illustration of bottom gate flexible graphene FET (GFET). Reproduced with permission. [93] Copyright 2013, American Chemical Society. k) Cross-section schematic illustration of top gate flexible GFET with self-aligned gate configuration. Reproduced with permission. [94] Copyright 2014, American Chemical Society. l) High-frequency characteristics of flexible GFET with gate length of 50 nm. Reproduced with permission. [95] Copyright 2018, Wiley-VCH. m) Schematic illustration and gain curves of flexible microwave transistor based on MoS 2 as function of frequency. Reproduced with permission. [96] Copyright 2014, Springer Nature. n) High-frequency characteristics of flexible microwave transistor based on black phosphorus (BP) as function of frequency. Reproduced with permission.

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Electromechanical Reliability Testing of Flexible Hybrid Electronics Incorporating FleX Silicon-On-Polymer Ics

Cited by 18 publications

References 0 publications

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

Bending induced electrical response variations in ultra-thin flexible chips and device modeling

The 2021 flexible and printed electronics roadmap

Flexible and Stretchable Microwave Electronics: Past, Present, and Future Perspective

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