Electromagnetic modeling and resonant detectors and arrays

Choi, K. K.; Sun, Jason; DeCuir, E. A.; Olver, K.; Wijewarnasuriya, P. S.

doi:10.1016/j.infrared.2014.09.009

Cited by 14 publications

(9 citation statements)

References 14 publications

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“…From Eq. (2), it is apparently that J d increases exponentially with n d but is independent of n w for the same V.…”

Section: Detector Dark Current and Gainmentioning

confidence: 90%

“…1 Recently, we have advanced a new detector structure, which is known as the resonator-QWIP or R-QWIP. 2 The R-QWIP uses a thin, lightly doped resonator structure to achieve a high quantum efficiency (QE) and a large photoconductive gain g. Its performance characteristics are significantly different from the conventional QWIP structures in terms of QE, g, and the photocurrent to dark current ratio, r. It is therefore worthwhile to conduct another analysis based on the new structure. The figure of merit in this analysis is the noise equivalent temperature difference NEΔT at a given integration time τ int and operating temperature T.…”

Section: Introductionmentioning

confidence: 99%

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Resonator-QWIP FPA development

2015

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Previously, we adopted the resonator-QWIPs and increased the FPA QE to 30 − 40%. In this work, we performed a systematic theoretical analysis on the potential performance based on this new detector structure. In this analysis, the doping density and the number of quantum wells are varied to obtain different detector characteristics. For 25 μm pixel pitch, 10 Me − integrated charge, and F/2 optics, the analysis shows that a 9.2 μm cutoff R-QWIP optimized for high temperature operation could provide 20 mK NEΔT at τ int = 2.6 ms when operating at T = 80 K. An R-QWIP with a 10.2 μm cutoff could achieve the same with τ int = 1.3 ms at T = 74 K. Similar NEΔT can also be achieved with smaller pixel pitch down to 6 μm for both cutoffs with a more relaxed operating condition where the f-number is 1, τ int is 5 ms, and T is 70 K. We provide preliminary test detector data to support this analysis.

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“…From Eq. (2), it is apparently that J d increases exponentially with n d but is independent of n w for the same V.…”

Section: Detector Dark Current and Gainmentioning

confidence: 90%

Section: Introductionmentioning

confidence: 99%

Resonator-QWIP FPA development

2015

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“…We applied it to design a new detector structure, which uses a resonator to increase the QE of the detectors. [8][9][10] We call the detector resonator-QWIP or R-QWIP. The R-QWIP structure uses the active pixel volume as a resonator to store the incident light until the light is absorbed.…”

Section: Introductionmentioning

confidence: 99%

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

Sun

Choi

DeCuir

et al. 2017

J. Micro/Nanolith. MEMS MOEMS

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Abstract. The infrared absorption of SF 6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF 6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320 × 256 format. The initial test revealed promising results. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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“…[1][2][3][4] An R-QWIP consists of an active QW layer, a GaAs bottom contact layer, and a top GaAs contact layer. On the top contact layer, there is an array of diffractive elements (DEs) that are covered with ohmic metal and gold layers.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Resonator-Quantum Well Infrared Photodetector (RQWIP) with 10.2 μm cutoff

et al. 2015

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Recently, we have developed a new detector structure, which is known as the resonator-QWIP or R-QWIP. With the new structure, we demonstrated quantum efficiency (QE) as high as 70% in single detectors and 30 -40% in focal plane arrays (FPAs) with 9 μm cutoff. In this study, we designed a broadband, 10 μm cutoff R-QWIP FPA using a more accurate refractive index. To achieve the theoretical prediction, the substrates of the detectors have to be removed completely to prevent the escape of unabsorbed light out of the detectors. The height of the diffractive elements (DE) and the thickness of the active resonator must also be uniformly produced within 0.05 μm accuracy. To achieve these specifications, two optimized inductively coupled plasma (ICP) etching processes are developed. Using these etching techniques, a number of single detectors were fabricated to verify the analysis before FPA production. In general, test data support the theoretical predictions.

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Electromagnetic modeling and resonant detectors and arrays

Cited by 14 publications

References 14 publications

Resonator-QWIP FPA development

Resonator-QWIP FPA development

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

Fabrication of Resonator-Quantum Well Infrared Photodetector (RQWIP) with 10.2 μm cutoff

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