“…The self-biasing scheme is considered in Fig. 1 a; therefore, the gate voltage can be determined by , where is the gate capacitance of the silicon oxide in the unit of ; is the relative dielectric constant at dc (about 3.9 for ); the relation between and can be approximated as 49 .…”
Section: Methods Of Mathematical Analysismentioning
A surface plasmon resonance (SPR) sensor based on gate-controlled periodic graphene ribbons array is reported. Different from the conventional methods by monitoring reflectivity variations with respect to incident angle or wavelength, this approach measures the change in SPR curve against the variation of graphene chemical potential (via dynamically tuning the gate voltage) at both fixed incident angle and wavelength without the need of rotating mirror, tunable filter or spectrometer for angular or wavelength interrogation. Theoretical calculations show that the sensitivities are 36,401.1 mV/RIU, 40,676.5 mV/RIU, 40,918.2 mV/RIU, and 41,160 mV/RIU for analyte refractive index (RI) equal to 1.33, 1.34, 1.35 and 1.36; their figure of merit (1/RIU) are 21.84, 24, 23.74 and 23.69, respectively. Significantly, the enhancement in the non-uniform local field due to the subwavelength graphene ribbon resonator can facilitate the detection in redistribution of protein monolayers modeled as dielectric bricks.
“…The self-biasing scheme is considered in Fig. 1 a; therefore, the gate voltage can be determined by , where is the gate capacitance of the silicon oxide in the unit of ; is the relative dielectric constant at dc (about 3.9 for ); the relation between and can be approximated as 49 .…”
Section: Methods Of Mathematical Analysismentioning
A surface plasmon resonance (SPR) sensor based on gate-controlled periodic graphene ribbons array is reported. Different from the conventional methods by monitoring reflectivity variations with respect to incident angle or wavelength, this approach measures the change in SPR curve against the variation of graphene chemical potential (via dynamically tuning the gate voltage) at both fixed incident angle and wavelength without the need of rotating mirror, tunable filter or spectrometer for angular or wavelength interrogation. Theoretical calculations show that the sensitivities are 36,401.1 mV/RIU, 40,676.5 mV/RIU, 40,918.2 mV/RIU, and 41,160 mV/RIU for analyte refractive index (RI) equal to 1.33, 1.34, 1.35 and 1.36; their figure of merit (1/RIU) are 21.84, 24, 23.74 and 23.69, respectively. Significantly, the enhancement in the non-uniform local field due to the subwavelength graphene ribbon resonator can facilitate the detection in redistribution of protein monolayers modeled as dielectric bricks.
“…The discovery of graphene, a two-dimensional (2D) array of carbon atoms in a hexagonal lattice, marked the beginning of an entirely new era of research, fueled by its exceptional properties [1], such as exceptionally high mobility [2,3], ultra high thermal conductivity [4], ability to respond to a wide variety of surface adsorbates [5], etc. Although the zero band gap of graphene turned it into a poor material for field effect transistors (FETs) in terms of switching [6], it has been wellestablished that this shortcoming can be effectively overcome by forming a heterojunction with graphene and another semiconductor, with additional benefits stemming from the presence of a Schottky barrier at the hetero-interface [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24]. The functionality of these devices can be further enhanced, by realizing a gate tunable version of this device structure where the Schottky barrier height (SBH) can be modified electrically, turning it into a Schottky barrier transistor (i.e.…”
Section: Introductionmentioning
confidence: 99%
“…'barristor'). These devices can find wide spread applications in RF electronics, molecular sensing, photo detection, analog amplification and digital electronics [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. Since graphene absorbs about 2.3% of the incident light per layer, mono-or bilayer graphene is an excellent candidate for transparent electrodes with the additional benefit provided by the SBH that can be tuned by electrically or chemically modifying its Dirac point [25].…”
In this work, an electrically/chemically tunable highly sensitive photodetector based on mixed dimensional heterojunction of graphene and planar InN nanowires (NW) is presented. Controlled partial oxidation of InN has been employed to effectively reduce the high surface carrier concentration of InN, which normally prevents it from forming good rectifying contact with graphene. The resulting surface modified InN NWs have been found to form excellent Schottky junction with graphene, with an increase in effective Schottky barrier height (SBH) by over 1.1 eV and a ratio of forward and reverse bias currents exceeding 4 orders of magnitude. Moreover, very strong barristor (gate tunable heterojunction) action has been observed, with I
on/I
off ≈ 4 orders of magnitude, and SBH increase by >0.3 eV. The barristor has been demonstrated to be highly sensitive to light, especially in the ultra-voilet, visible and near IR spectra. Responsivity was found to be widely tunable by gate voltage, with the highest value exceeding 1000 A W−1. Rise and fall times being in the range of hundreds of ms are indicative of photoconductive gain, which can be attributed to the ultra high responsivity. A method of semi-permanent molecular doping has been demonstrated to realize a two-terminal version of the photodetector, where the desired responsivity can still be achieved without requiring a back gate terminal, enabling the device to be realized on insulating substrates. The effect of encapsulation has been studied as a function of time, which has showed the long term stability of the dopant-induced enhancement and ultra high responsivity of the barristor photodetector.
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