Electromagnetic Compatibility in Leakage Current of CMOS Integrated Circuits

Abedi, Zahra; Hemmady, Sameer; Antonsen, Thomas M.; Schamiloglu, E.; Zarkesh-Ha, Payman

doi:10.1109/emceurope.2019.8872123

Cited by 2 publications

(3 citation statements)

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“…To the best of our knowledge there has not been any previous predictive model for leakage current under EMI. Our previously published model captures the leakage model only at low frequencies [15]. The new predictive model presented in this paper extends our previous model by taking frequency into consideration.…”

Section: Discussionmentioning

confidence: 71%

“…The effective voltage then is Since V GS voltage is zero, V DS can be estimated by the power supply voltage, V DD . Therefore, by substituting V GS = Vn sin(ωt) and V DS ≈ V DD in Equation ( 1), the leakage current under EMI over one cycle of the RF injection (T = 2π ω ), and knowing V DD V T will yield (see [15])…”

Section: Transfer Functionmentioning

confidence: 99%

“…In our previous work, we reported on a predictive model to estimate the impact of EMI on the leakage current of a digital integrated circuit at the low frequency of 10 MHz [15]. Based on our developed predictive model, we found that the rate of increase in leakage current, as a function of injected RF power, is independent of transistor scaling, technology node, or power supply voltage.…”

Section: Introductionmentioning

confidence: 99%

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Application of High-Frequency Leakage Current Model for Characterizing Failure Modes in Digital Logic Gates

et al. 2021

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In this paper, a predictive model is developed to characterize the impact of high-frequency electromagnetic interference (EMI) on the leakage current of CMOS integrated circuits. It is shown that the frequency dependence can be easily described by a transfer function that depends only on a few dominant parasitic elements. The developed analytical model is successfully compared against measurement data from devices fabricated using 180 nm, 130 nm, and 65 nm standard CMOS processes through TSMC. Based on the predictive model, the impact of EMI on leakage current in a CMOS inverter is reduced by increasing the frequency from 10 MHz to 4 GHz.

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Section: Discussionmentioning

confidence: 71%

Section: Transfer Functionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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