Electroluminescent Devices with Ga₂O₃:Mn Thin-Film Emitting Layer Prepared by Sol-Gel Process

Abstract

High-luminance electroluminescent devices have been newly developed using a Ga 2 O 3 :Mn thin film prepared by a sol-gel process. The sol-gel process, which eliminates the need for vacuum processes, enabled the inexpensive preparation of Ga 2 O 3 :Mn thin films on large-area thick ceramic sheet insulators. Gallium acethylacetonate, a relatively inexpensive and easy to handle material, was used as the Ga source material. Thin-film electroluminescent (TFEL) devices with a Ga 2 O 3 :Mn thin-film emitting layer prepared by the sol-gel process at a deposition temperature of 900 • C and a postannealing temperature of 1000 • C exhibited luminances of 1271 and 401 cd/m 2 when driven at 1 kHz and 60 Hz, respectively.

Microstructure and Thermally Stimulated Luminescence of β -Ga2O3Thin Films

“…Therefore, the films based on β-Ga 2 O 3 are widely used as thin film materials for field effect transistors (FET) [1], gas sensors [2] and electrodes, transparent in the UV region [3]. Depending on the method of obtaining and the dopant, such films are used as photoluminophors [4,5], cathodoluminophors and electroluminophors [6,7]. In general, the optical and electrical properties of β-Ga 2 O 3 thin films are determined by the methods they were obtained, the regimes of deposition, and subsequent technological methods that determine local centers whose energy levels are located in the band gap.…”

ALD and MOCVD of Ga2O3 Thin Films Using the New Ga Precursor Dimethylgallium Isopropoxide, Me2GaOiPr

“…Doped with manganese, gallium oxide becomes a luminescent material for green light. [24,25] Europium-doped gallium oxide exhibits red emission. [26] With different dopants, gallium oxide acts as the host material for multicoloremitting phosphors.…”

“…[37] Thin films of gallium oxide have been prepared by various methods: (radiofrequency) magnetron sputter deposition, [1][2][3][4]6,7,9,10,12,25,27] electron beam evaporation, [15][16][17]21] pulsed laser deposition, [26,28,30,33,34,36] laser ablation, [31] CVD, [38][39][40][41][42][43][44][45][46][47] ALD, [48][49][50][51][52] molecular beam epitaxy, [32,35] vapor phase epitaxy, [53] spray pyrolysis, [54,55] and sol-gel process. [5,13,23,24] Among these methods, CVD is considered very important because it can readily be employed in industrial processes. ALD is also important as the sizes of electronic devices become smaller.…”

Characterization of Spray Deposited ZnMn2O4 Nanostructured Thin Films

“…They are reactive deposition (Rizzi et al, 2000), sol-gel (Long et al, 2001;Minami et al, 2000), plasma assisted molecular beam epitaxy (Guo et al, 2001), r.f. sputtering (Fau et al, 1994), thermal decomposition (Farid Ul Islam et al, 2005), spray pyrolysis (Farid Ul Islam et al, 2007), solid-state reaction (Li et al, 1999;Hao et al, 2011), co-precipitation method (Zhai et al, 2011) and hydrothermal method (Duan et al, 2010;Cheng et al, 2014).…”