Abstract:Abstract. Electroluminescence of mid-infrared LEDs with active layer made of InAs andInAsSb in a wide temperature range (4.2-300 K) was studied. At low temperatures (T=4.2-100 K), stimulated emission from the LEDs was observed. The emission became spontaneous at higher temperatures due to the effect of CHHS Auger recombination process, when the energy of a recombining electron-hole pair was transferred to another hole with the latter transitioning to the spin-orbit-splitted band. The spontaneous character of r… Show more
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