Electroluminescence of erbium-doped silicon

Palm, J.; Gan, Fuwan; Zheng, Bo; Michel, Jürgen; Kimerling, Lionel C.

doi:10.1103/physrevb.54.17603

Cited by 247 publications

(151 citation statements)

References 33 publications

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“…After the initial report [2], Er-doped Si light emitting diodes (LEDs) operating at room temperature were demonstrated with good electrical properties. However, the luminescence efficiencies were quite poor due to their intrinsic Auger-and temperature quenching of Er 3+ luminescence [3]. On the other hand, excellent optical properties were obtained by using silicon-rich-silicon-oxide (SRSO), which consists of nanocluster Si (nc-Si) embedded inside an SiO 2 matrix [4].…”

Section: Introductionmentioning

confidence: 99%

Optical activation of Si nanowires using Er-doped, sol-gel derived silica

et al. 2005

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Optical activation of Si nanowires (Si-NWs) using sol-gel derived Er-doped silica is investigated. Si-NWs of about 100 nm diameter were grown on Si substrates by the vapor-liquidsolid method using Au catalysts and H 2 diluted SiCl 4 . Afterwards, Er-doped silica sol-gel solution was spin-coated, and annealed at 950 °C in flowing N 2 /O 2 environment. Such Er-doped silica/Si-NWs nanocomposite is found to combine the advantages of crystalline Si and silica to simultaneously achieve both high carrier-mediated excitation efficiency and high Er 3+ luminescence efficiency while at the same time providing high areal density of Er 3+ and easy current injection, indicating the possibility of developing sol-gel activated Si-NWs as a new material platform for Si-based photonics.

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Section: Introductionmentioning

confidence: 99%

Optical activation of Si nanowires using Er-doped, sol-gel derived silica

et al. 2005

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“…[1][2][3][4][5][6][7] Previously, this material has mainly been studied because it provides a means to attain light emission from silicon, a phenomenon that is of great importance in Si-based optoelectronic technology. Indeed, room-temperature photoluminescence ͑PL͒ from Er-doped silicon has been reported, and room-temperature light-emitting diodes have been fabricated.…”

Section: Introductionmentioning

confidence: 99%

“…2,5,6,8 Two quenching mechanisms have been identified. First, at temperatures typically above 30 K, Auger quenching takes place, 4 in which an excited Er ion is deexcited by energy transfer to a free electron or hole ͑W A,e and W A,h in Fig. 1͒.…”

Section: Introductionmentioning

confidence: 99%

Energy backtransfer and infrared photoresponse in erbium-doped silicon p–n diodes

Hamelin

Kik

Suyver

et al. 2000

Journal of Applied Physics

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Temperature-dependent measurements of the photoluminescence ͑PL͒ intensity, PL lifetime, and infrared photocurrent, were performed on an erbium-implanted silicon p -n junction in order to investigate the energy transfer processes between the silicon electronic system and the Er 4 f energy levels. The device features excellent light trapping properties due to a textured front surface and a highly reflective rear surface. The PL intensity and PL lifetime measurements show weak temperature quenching of the erbium intra-4 f transition at 1.535 m for temperatures up to 150 K, attributed to Auger energy transfer to free carriers. For higher temperatures, much stronger quenching is observed, which is attributed to an energy backtransfer process, in which Er deexcites by generation of a bound exciton at an Er-related trap. Dissociation of this exciton leads to the generation of electron-hole pairs that can be collected as a photocurrent. In addition, nonradiative recombination takes place at the trap. It is shown for the first time that all temperature-dependent data for PL intensity, PL lifetime, and photocurrent can be described using a single model. By fitting all temperature-dependent data simultaneously, we are able to extract the numerical values of the parameters that determine the ͑temperature-dependent͒ energy transfer rates in erbium-doped silicon. While the external quantum efficiency of the photocurrent generation process is small (1.8ϫ10 Ϫ6 ) due to the small erbium absorption cross section and the low erbium concentration, the conversion of Er excitations into free e -h pairs occurs with an efficiency of 70% at room temperature.

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“…Much work in this area was motivated by the prospect of room-temperature light sources [68] for CMOS and telecommunications [69], and in particular room temperature lasers. This includes various point defects in Si including Er [70][71][72][73] and other emissive centers giving rise to electric-dipole-mediated transitions [67,[74][75][76][77][78][79][80][81][82], as well as band-edge or Si nanocrystal-based emission processes [83][84][85]. While the efficiencies of many of these emitters fall off exponentially with increasing temperature, the SNSPDs required for this application operate at cryogenic temperatures where many point defects have suitable efficiencies.…”

Section: G Electrically-injected Light Sourcementioning

confidence: 99%

Superconducting Optoelectronic Circuits for Neuromorphic Computing

et al. 2017

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Neural networks have proven effective for solving many difficult computational problems. Implementing complex neural networks in software is very computationally expensive. To explore the limits of information processing, it will be necessary to implement new hardware platforms with large numbers of neurons, each with a large number of connections to other neurons. Here we propose a hybrid semiconductor-superconductor hardware platform for the implementation of neural networks and large-scale neuromorphic computing. The platform combines semiconducting few-photon light-emitting diodes with superconducting-nanowire single-photon detectors to behave as spiking neurons. These processing units are connected via a network of optical waveguides, and variable weights of connection can be implemented using several approaches. The use of light as a signaling mechanism overcomes fanout and parasitic constraints on electrical signals while simultaneously introducing physical degrees of freedom which can be employed for computation. The use of supercurrents achieves the low power density necessary to scale to systems with enormous entropy. The proposed processing units can operate at speeds of at least 20 MHz with fully asynchronous activity, light-speed-limited latency, and power densities on the order of 1 mW/cm 2 for neurons with 700 connections operating at full speed at 2 K. The processing units achieve an energy efficiency of ≈ 20 aJ per synapse event. By leveraging multilayer photonics with deposited waveguides and superconductors with feature sizes > 100 nm, this approach could scale to systems with massive interconnectivity and complexity for advanced computing as well as explorations of information processing capacity in systems with an enormous number of information-bearing microstates.

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Electroluminescence of erbium-doped silicon

Cited by 247 publications

References 33 publications

Optical activation of Si nanowires using Er-doped, sol-gel derived silica

Optical activation of Si nanowires using Er-doped, sol-gel derived silica

Energy backtransfer and infrared photoresponse in erbium-doped silicon p–n diodes

Superconducting Optoelectronic Circuits for Neuromorphic Computing

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