Electroluminescence in a-Si<sub>1−x</sub>C<sub>x</sub>:H p-i-n structures†

Певцов, А. Б.; Zherzdev, A.V.; Феоктистов, Н. А.; Juška, G.; Muschik, T.; Schwarz, R.

doi:10.1080/00207219508926162

Cited by 10 publications

(1 citation statement)

References 5 publications

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“…To meet the above conditions for the inhibition of the TM stop-band, we synthesized a 1D photonic crystal representing a 14-layer Bragg structure (figure 1) made up of alternating quarter-wave a-Si:O:H and a-Si:C:H layers deposited on a quartz substrate [8][9][10][11]. The optical parameters of the growing structure were controlled in situ from the interference patterns obtained during the registration of the signal reflected from the film surface.…”

Section: Sample Parameters: Evaluation and Fabricationmentioning

confidence: 99%

Matrix-Dependent Percolation and Resistivity versus Temperature Behaviors of Conducting Composite Thin Films

Hirano

Kishimoto

1998

Jpn. J. Appl. Phys.

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Bragg reflection spectra of high-contrast silicon-based 1D photonic crystals were measured for oblique incidence of light. The angular behaviour of the stop-band width has been investigated in the vicinity of the critical angle of incidence (an analogue of the Brewster angle) at which the stop-band for TM-mode disappears. The stop-band inhibition is experimentally observed against the background of pronounced Fabry-Perot interference due to the finite thickness of a photonic crystal slab. It is shown that the width of equidistant fringes arising from the interference limits the minimal measured Bragg reflection band width. The conditions for stop-band to collapse are considered theoretically and shown to be in good agreement with the experimental data presented.

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Section: Sample Parameters: Evaluation and Fabricationmentioning

confidence: 99%

Matrix-Dependent Percolation and Resistivity versus Temperature Behaviors of Conducting Composite Thin Films

Hirano

Kishimoto

1998

Jpn. J. Appl. Phys.

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a-Si:H/a-SiOx:H microcavities with a-Si(Er):H active layer

Dukin

Феоктистов

Голубев

et al. 2002

Journal of Non-Crystalline Solids

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Optical properties of a Fabry–Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer

Dukin

Феоктистов

Голубев

et al. 2000

Applied Physics Letters

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Fabry–Pérot hydrogenated amorphous silicon (a-Si:H)/amorphous-SiOx:H microcavities with an erbium-doped a-Si:H active region are fabricated by a plasma-enhanced chemical-vapor deposition technique in a single technological cycle without exposure to air between the intermediate operations. A metalorganic compound is used to incorporate erbium in the active a-Si:H layer. Transmission, reflection, and photoluminescence spectra of the microcavities are measured. The experimental data are compared to theoretical calculations performed in terms of field amplitudes generated by stochastic excitation sources.

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Electroluminescence in a-Si_1−xC_x:H p-i-n structures†

Cited by 10 publications

References 5 publications

Matrix-Dependent Percolation and Resistivity versus Temperature Behaviors of Conducting Composite Thin Films

Matrix-Dependent Percolation and Resistivity versus Temperature Behaviors of Conducting Composite Thin Films

a-Si:H/a-SiOx:H microcavities with a-Si(Er):H active layer

Optical properties of a Fabry–Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer

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Electroluminescence in a-Si1−xCx:H p-i-n structures†

Cited by 10 publications

References 5 publications

Matrix-Dependent Percolation and Resistivity versus Temperature Behaviors of Conducting Composite Thin Films

Matrix-Dependent Percolation and Resistivity versus Temperature Behaviors of Conducting Composite Thin Films

a-Si:H/a-SiOx:H microcavities with a-Si(Er):H active layer

Optical properties of a Fabry–Pérot microcavity with Er-doped hydrogenated amorphous silicon active layer

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Electroluminescence in a-Si_1−xC_x:H p-i-n structures†