Electroluminescence from the light-emitting devices with erbium-doped SrTiO3 films on oxidized silicon substrate

Lu, Linlin; Xia, Chengtao; Wang, Ziwei; Hu, Jie; Yang, Deren; Ma, Xiangyang

doi:10.1016/j.optmat.2021.111402

Cited by 9 publications

(5 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Huang, H [62] Similar to the effect shown experimentally in noble metal ion doped SrTiO 3 [63]. Moreover, RE-doped SrTiO 3 elements have a beneficial impact on optical and photocatalytic characteristics, rendering this sort of material competitive with other classes of materials like 2D silicon [64] oxynitride semiconductors [65] RE-doped Oxide films such as Oxide of Zinc [66] as well as other perovskite films for instance Er-doped SrTiO 3 [67] and film with excess CH 3 NH 3 I [68]. Accordingly, RE-doped systems compared to the pristine SrTiO 3 , present a better band gap energy, absorptive capacity, and band edge levels, which would lead to increased photocatalytic activity.…”

Section: G ( ) N mentioning

confidence: 63%

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO₃ for efficient photocatalytic activity

Mjahed,

Bouda,

Salmani

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

Owing to the growing demand for environmentally friendly technologies across a wide range of fields, including energy, environment and medicine, photocatalytic materials have gained a lot of interest in recent years. First-principles calculations were used in order to examine a variety of physical characteristics such as electronic density of states, structural, optical, and photocatalytic properties of pristine and rare-earth (RE= La, Pr, Eu) doped SrTiO3. The reported electronic band gap of pristine SrTiO3 is Eg = 3.03 eV, which is reasonably consistent with prior theoretical and experimental studies. On the other hand, related to Sr(1˗x)RExTiO3, the obtained energy band gaps are 2.75 eV, 2.80 eV, and 2.90 eV associated with Eu-SrTiO3, Pr-SrTiO3, and La-SrTiO3 respectively. The narrowing of the electronic band gap of the studied systems is due to the incorporation of RE-doped SrTiO3, which greatly enhanced the visible light absorption spectra and photocatalytic properties. Thus, it can be concluded that adding RE elements to this kind of materials, is a suitable choice for optoelectronic and photocatalytic applications.

show abstract

Section: G ( ) N mentioning

confidence: 63%

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO₃ for efficient photocatalytic activity

Mjahed,

Bouda,

Salmani

et al. 2024

Phys. Scr.

View full text Add to dashboard Cite

show abstract

“…The EL peaks at ≈412, 524, 546, and 668 nm, respectively, can be ascribed to the intra‐4 f transitions of the Er 3+ ion. [ 29 ] As seen from Figure 3b, the LED with Ta 2 O 5 :Er (0.75%) film exhibits the weakest EL due to the smallest number of active Er 3+ ions incorporated into Ta 2 O 5 host. Unexpectedly, the visible and NIR EL from the LED with Ta 2 O 5 :Er (1.5%) film are stronger than those from the counterpart with Ta 2 O 5 :Er (3%) film that possesses the largest amount of active Er 3+ ions as revealed in Figure 3a.…”

Section: Resultsmentioning

confidence: 99%

Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta₂O₅ Films

Xia,

Wang,

Jiang

et al. 2024

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

The visible and near‐infrared electroluminescence (EL) from the light‐emitting device (LED) based on the erbium (Er)‐doped Ta2O5 (Ta2O5:Er)/SiO2/Si structure is reported in this study. Wherein, an ∽10 nm thick SiO2 intermediate layer serves as an energy plateau for forming hot electrons, which initially transport from Si via trap‐assisted tunneling mechanism under sufficiently forward bias with the negative voltage connecting with Si. The hot electrons impact‐excite the Er3+ ions incorporated into the Ta2O5 host, leading to the Er‐related EL from the aforementioned LED. It is found that the 750 °C ‐ annealed Ta2O5:Er films are desirable to act as the light‐emitting component. Despite that the Er‐related photoluminescence from the Ta2O5:Er film becomes stronger in turn with the Er‐doping content increasing from nominal 0.75, 1.5 to 3 mol %, it is the Ta2O5:Er film with Er‐doping content of nominal 1.5 mol % rather than 3 mol % that enables the LED to exhibit the strongest EL. Based on the EL lifetime measurement and the structural characterizations, it is believed that the enhanced non‐radiative interactions among the Er3+ ions and the substantial amorphousness of Ta2O5 host caused by the nominal 3 mol % Er‐doping are responsible for the weakened EL as mentioned above.This article is protected by copyright. All rights reserved.

show abstract

“…The procedures and conditions for film deposition and subsequent annealing can be referred to those as described in our previous work . Finally, the electrodes of the ZnO:Er/SiO 2 /n + -Si or ZnO:(Ti, Er)/SiO 2 /n + -Si structured LED were prepared according to the procedures adopted in our previous work …”

Section: Methodsmentioning

confidence: 99%

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Xia

Chen

Zhao

et al. 2022

ACS Appl. Mater. Interfaces

Self Cite

View full text Add to dashboard Cite

We report on the visible and near-infrared electroluminescence (EL) from the light-emitting device (LED) based on the erbium (Er)-doped ZnO (ZnO:Er)/SiO2/n+-Si heterostructure, wherein an ∼10 nm thick SiO2 intermediate layer serves as the energy plateau for producing hot electrons, which come from n+-Si via the trap-assisted tunneling mechanism. These hot electrons excite the doped Er3+ ions by inelastic collision, enabling the Er-related EL from the aforementioned LED. More importantly, by means of codoping the appropriate content of titanium (Ti) into the ZnO:Er film, the aforementioned Er-related emissions can be significantly enhanced. The density functional theory calculations indicate that the Ti-codoping improves rather than degrades the symmetry of the crystal field around the optically active Er3+ ions, hence not increasing the intra-4f transition probabilities of Er3+ ions. However, it is found that Ti-codoping nearly eliminates the segregation of Er3+ ions near the ZnO/SiO2 interface. Moreover, Ti-codoping is derived to result in a number of Zn vacancies, which provide the sites for incorporating Er3+ ions in the ZnO matrix. For the above two reasons, the Ti-codoping promotes the incorporation of optically active Er3+ ions into the ZnO matrix, thus enhancing the EL from the aforementioned LED.

show abstract

Electroluminescence from the light-emitting devices with erbium-doped SrTiO3 films on oxidized silicon substrate

Cited by 9 publications

References 26 publications

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO₃ for efficient photocatalytic activity

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO₃ for efficient photocatalytic activity

Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta₂O₅ Films

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Contact Info

Product

Resources

About

Electroluminescence from the light-emitting devices with erbium-doped SrTiO3 films on oxidized silicon substrate

Cited by 9 publications

References 26 publications

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO3 for efficient photocatalytic activity

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO3 for efficient photocatalytic activity

Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta2O5 Films

Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped ZnO Films: Strong Enhancement Effect of Titanium Codoping

Contact Info

Product

Resources

About

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO₃ for efficient photocatalytic activity

Impact of rare earth (La, Pr, Eu) impurities on the perovskite SrTiO₃ for efficient photocatalytic activity

Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta₂O₅ Films