Abstract:Visible electroluminescence with a peak wavelength of 6300 Å is observed from forward-biased porous Si p-n diodes with conducting polymer contacts. These devices have brighter electroluminescence than similar devices with thin, gold-film contacts. Electroluminescence is also observed from conducting polymer/n-porous Si diodes.
“…111 The pore diameter and consequently the size of interconnected Si nanostructure depends on the electrochemical conditions. 112 The Raman spectrum of p-Si consists of an asymmetrically broadened F 2g phonon line characteristic of nanocrystalline Si and an overlapping broad peak at 480 cm 1 associated with amorphous Si.…”
If the medium surrounding a nano-grain does not support the vibrational wavenumbers of a material, the optical and acoustic phonons get confined within the grain of the nanostructured material. This leads to interesting changes in the vibrational spectrum of the nanostructured material as compared to that of the bulk. Absence of periodicity beyond the particle dimension relaxes the zone-centre optical phonon selection rule, causing the Raman spectrum to have contributions also from phonons away from the Brillouin-zone centre. Theoretical models and calculations suggest that the confinement results in asymmetric broadening and shift of the optical phonon Raman line, the magnitude of which depends on the widths of the corresponding phonon dispersion curves. This has been confirmed for zinc oxide nanoparticles. Microscopic lattice dynamical calculations of the phonon amplitude and Raman spectra using the bond-polarizability model suggest a power-law dependence of the peak-shift on the particle size. This article reviews recent results on the Raman spectroscopic investigations of optical phonon confinement in several nanocrystalline semiconductor and ceramic/dielectric materials, including those in selenium, cadmium sulphide, zinc oxide, thorium oxide, and nano-diamond. Resonance Raman scattering from confined optical phonons is also discussed.
“…111 The pore diameter and consequently the size of interconnected Si nanostructure depends on the electrochemical conditions. 112 The Raman spectrum of p-Si consists of an asymmetrically broadened F 2g phonon line characteristic of nanocrystalline Si and an overlapping broad peak at 480 cm 1 associated with amorphous Si.…”
If the medium surrounding a nano-grain does not support the vibrational wavenumbers of a material, the optical and acoustic phonons get confined within the grain of the nanostructured material. This leads to interesting changes in the vibrational spectrum of the nanostructured material as compared to that of the bulk. Absence of periodicity beyond the particle dimension relaxes the zone-centre optical phonon selection rule, causing the Raman spectrum to have contributions also from phonons away from the Brillouin-zone centre. Theoretical models and calculations suggest that the confinement results in asymmetric broadening and shift of the optical phonon Raman line, the magnitude of which depends on the widths of the corresponding phonon dispersion curves. This has been confirmed for zinc oxide nanoparticles. Microscopic lattice dynamical calculations of the phonon amplitude and Raman spectra using the bond-polarizability model suggest a power-law dependence of the peak-shift on the particle size. This article reviews recent results on the Raman spectroscopic investigations of optical phonon confinement in several nanocrystalline semiconductor and ceramic/dielectric materials, including those in selenium, cadmium sulphide, zinc oxide, thorium oxide, and nano-diamond. Resonance Raman scattering from confined optical phonons is also discussed.
“…They have received increasing interest for sensor design due to their room temperature operation, low fabrication costs, ease of deposition onto a wide variety of substrates [5] and their rich chemistry for structural modifications [6]. Polyaniline is unique among the family of conducting polymers as its conductivity can reversibly be controlled by the protonation of the imine sites and/or the oxidation of the main polymer chain [7].…”
“…Conducting polymers are of increasing importance in the development of smart sensors due to their room temperature operation, low fabrication cost, ease of deposition onto a wide variety of substrates [1] [2] and their rich structural modification chemistry [3].…”
Template-free, rapid polymerisation was employed to synthesize polyaniline nanofibers using chemical oxidative polymerisation of aniline, with HCl as a dopant. The doped and dedoped nanofibers were deposited onto conductometric sapphire transducers for gas sensing applications. The sensors were exposed to various concentrations of hydrogen (H 2 ) gas at room temperature. The sensitivity was measured to be 1.11 for doped and 1.07 for dedoped polyaniline nanofiber sensors upon exposure to 1% H 2 . Fast response times of 28 seconds and 32 seconds were observed for dedoped and doped sensors respectively. The dedoped nanofiber sensor outperforms the doped sensor in terms of baseline stability and repeatability. Due to its room temperature operation, the gas sensor is promising for environmental applications.
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