Electroluminescence from erbium and oxygen coimplanted GaN

Torvik, John T.; Feuerstein, R.J.; Pánkové, J. I.; Qiu, C. H.; Namavar, F.

doi:10.1063/1.116892

Cited by 72 publications

(53 citation statements)

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“…Related to the fact that temperature-stable and narrow-line width electroluminescence can be generated from atomic transitions of rare earth (RE) atoms, there are perspectives to realize optoelectronic devices operating in the visible or infrared region based on RE doped GaN [1,2]. RE dopants that have been reported in that respect are Er, Tm, Pr, Eu, Dy, Sm, Ho and Nd.…”

mentioning

confidence: 99%

Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling

Vries

Wahl

Vantomme

et al. 2002

phys. stat. sol. (c)

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mentioning

confidence: 99%

Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling

Vries

Wahl

Vantomme

et al. 2002

phys. stat. sol. (c)

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“…[4][5][6][7][8][9][10][11][12] GaN is a wide band-gap III-V semiconductor useful as a short wavelength emitter and detector. 13 Previous investigations of Er luminescence in GaN:Er have been promising with most researchers finding only an ϳ50% decrease in photoluminescence intensity over the temperature range 6-300 K. 4,8,9,11 This is a significant improvement over the two-to-three order of magnitude decrease of Er luminescence intensity in GaAs:Er.…”

Section: ͓S0003-6951͑98͒02010-5͔mentioning

confidence: 99%

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Hansen

Zhang

Perkins

et al. 1998

Applied Physics Letters

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The photoluminescence of in situ-doped GaN:Er during hydride vapor phase epitaxy was compared to an Er-implanted GaN sample. At 11 K, the main emission wavelength of the in situ-doped sample is shifted to shorter wavelengths by 2.5 nm and the lifetime is 2.1Ϯ0.1 ms as compared to 2.9Ϯ0.1 ms obtained for the implanted sample. The 295 K band edge luminescence of the in situ-doped sample was free of the broad band luminescence centered at 500 nm which dominated the spectrum of the implanted sample. Reversible changes in the emission intensity of the in situ-doped sample upon annealing in a N 2 versus a NH 3 /H 2 ambient indicate the probable role of hydrogen in determining the luminescence efficiency of these samples. © 1998 American Institute of Physics. ͓S0003-6951͑98͒02010-5͔The rare-earth element erbium in the trivalent state (Er 3ϩ ) has received considerable attention since the 4 I 13/2 → 4 I 15/2 transition at 1540 nm coincides with a minimum in loss in silica optical fibers.1 This transition occurs between energy levels within the shielded 4 f electron shell, making the optical transitions of Er 3ϩ sharp, as well as relatively insensitive to temperature and host affects.2 These luminescence properties make erbium-doped semiconductors an appealing material system for application in optoelectronic devices.One problem which plagues the development of a practical erbium-doped semiconductor device is the pronounced temperature quenching of the rare-earth luminescence within most semiconductor hosts. Favennec et al. discovered that quenching of the rare-earth luminescence was reduced in wide band-gap semiconductor hosts.3 This discovery has lead to several investigations of Er-implanted GaN. [4][5][6][7][8][9][10][11][12] GaN is a wide band-gap III-V semiconductor useful as a short wavelength emitter and detector. 13 Previous investigations of Er luminescence in GaN:Er have been promising with most researchers finding only an ϳ50% decrease in photoluminescence intensity over the temperature range 6-300 K. 4,8,9,11 This is a significant improvement over the two-to-three order of magnitude decrease of Er luminescence intensity in GaAs:Er. 2The studies performed on GaN:Er so far have principally focused on Er implanted into GaN. The large mass of the Er implant species limits this technique to the formation of thin layers of GaN:Er with a high amount of residual implantrelated damage. In this letter, we report a photoluminescence study of in situ-doped GaN:Er during hydride vapor phase epitaxy ͑HVPE͒ using elemental Er as the in situ dopant and Er implanted into nominally undoped GaN also grown by HVPE. HVPE is an established technique for GaN growth and is capable of providing high growth rates and thick GaN layers. 13,14 The in situ doping of GaN with Er during HVPE growth should result, therefore, in thick, uniformly doped layers. Low temperature Er 3ϩ luminescence of the in situdoped sample is observed with the peak intensity at 1536.5 nm and an 11 K lifetime of 2.1Ϯ0.1 ms. The Er 3ϩ luminescence was no lon...

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“…III-V semiconductors doped with rare-earth elements have also been used 10,11,12,13,14,15,16,17,18 and have advantages compared to narrow bandgap materials 19 . The advantage of Nakamura's devices is their extremely high quantum efficiency 1 (~5%), whereas RE doped devices offer multiple color emission, wavelength-limited only by the RE element(s) chosen and not by the band gap energy of the semiconductor.…”

Section: Introductionmentioning

confidence: 99%

Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN

et al. 1998

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Electroluminescence from erbium and oxygen coimplanted GaN

Cited by 72 publications

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Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling

Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN

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Electroluminescence from erbium and oxygen coimplanted GaN

Cited by 72 publications

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Lattice Location of Implanted 147 Nd and 147* Pm in GaN Using Emission Channeling

Lattice Location of Implanted 147 Nd and 147* Pm in GaN Using Emission Channeling

Photoluminescence of erbium-implanted GaN and in situ-doped GaN:Er

Visible and Infrared Rare-Earth Activated Electroluminescence From Erbium Doped GaN

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Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling

Lattice Location of Implanted ¹⁴⁷ Nd and ^147* Pm in GaN Using Emission Channeling