Electroless Deposition Processes: Fundamentals and Applications

Okinaka, Y.; Osaka, Tetsuya

doi:10.1002/9783527616770.ch2

Cited by 56 publications

(50 citation statements)

References 139 publications

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“…This method has attracted great interest due to simplicity of operation, cost effectiveness, high throughput, and lack of elaborate equipment. [35,36] In principle, any materials with a sufficiently positive redox potential can be deposited via galvanic displacement. [9] The resulting patterns were characterized by scanning electron microscopy (SEM) and scanning electrochemical microscopy (SECM) on the basis of detection of catalytic current for the reduction of H 2 O 2 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and Patterning of Prussian Blue Nanostructures on Silicon Wafer via Galvanic Displacement Reaction

Song

Jia

Liu

et al. 2007

Adv Funct Materials

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Nanoscale materials directly interfacing semiconductors is a new area of nanoscience and nanotechnology. Tremendous attention has been paid to inorganic nano size crystals in recent years because of their significant properties. Prussian blue (PB) and its analogues could play important roles in the field of molecule‐based magnets, electrochromic materials, ion selectivity electrodes and biosensors. In this study, we report on fabricating Prussian blue patterns on silicon surface by combining the photolithographic techniques and galvanic displacement reaction, and the resulting patterns were characterized by scanning electron microscopy (SEM) and scanning electrochemical microscopy (SECM) on the basis of detection of catalytic current for the oxidation of H2O2.

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Section: Introductionmentioning

confidence: 99%

Synthesis and Patterning of Prussian Blue Nanostructures on Silicon Wafer via Galvanic Displacement Reaction

Song

Jia

Liu

et al. 2007

Adv Funct Materials

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“…2,3 The mechanism of electroless deposition can be simply understood by the mixed potential theory, although both reactions are known to be interdependent, showing an accelerating effect of HCHO intermediates such as methylene glycol for Cu reduction. 22,23 To examine the effect of MBIS on the respective partial reaction kinetics, linear sweep voltammetry was carried out.…”

Section: Resultsmentioning

confidence: 99%

“…1 Electroless Cu deposition has been mainly used in an area of printed circuit boards to form seed layers ͑conductive path͒ for Cu electrodeposition in high aspect ratio through-holes, taking advantage of its ability to metallize nonconductive epoxy glasses, polyimides, etc. 2,3 Recent research on Cu electroless deposition has extended its application to seed layer deposition for Cu electrodeposition in ULSI interconnect fabrication, with increasing advantages over alternative methods as the feature size decreases to a submicrometer scale. 4,5 Electroless deposition is a surface limited reaction that enables the deposition of considerably thin and uniform Cu seed layers with a superior step coverage compared to physical vapor deposition ͑PVD͒ or chemical vapor deposition seed layers.…”

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confidence: 99%

Effect of 2-Mercapto-5-benzimidazolesulfonic Acid in Superconformal Cu Electroless Deposition

Lee

Kim

Koo

et al. 2009

J. Electrochem. Soc.

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Superconformal Cu electroless deposition is demonstrated in a CuSO 4 -EDTA-HCHO ͑where EDTA is ethylenediaminetetraacetic acid͒ electrolyte containing 2-mercapto-5-benzimidazolesulfonic acid ͑MBIS͒. MBIS reveals a concentration-dependent effect in the deposition rate on planar substrates, whereby acceleration at low concentration and suppression at high concentration are evident. The half-cell reaction experiments show that the acceleration effect of MBIS is mainly associated with the cathodic reaction, while MBIS inhibits the oxidation of HCHO in the anodic reaction. The addition of MBIS offers preferential Cu electroless deposition at the bottom of 500 nm wide trenches. Poly͑ethylene glycol͒ improved the surface roughness, maintaining the shape evolution of superconformal feature filling. © 2009 The Electrochemical Society. ͓DOI: 10.1149/1.3117343͔ All rights reserved.Manuscript submitted December 9, 2008; revised manuscript received February 3, 2009. Published April 21, 2009 Superconformal Cu electrodeposition has been successfully implemented in the metallization of electronic devices, thereby enabling the buildup of multilevel interconnects for ultralarge-scale integration ͑ULSI͒. 1Electroless Cu deposition has been mainly used in an area of printed circuit boards to form seed layers ͑conductive path͒ for Cu electrodeposition in high aspect ratio through-holes, taking advantage of its ability to metallize nonconductive epoxy glasses, polyimides, etc.2,3 Recent research on Cu electroless deposition has extended its application to seed layer deposition for Cu electrodeposition in ULSI interconnect fabrication, with increasing advantages over alternative methods as the feature size decreases to a submicrometer scale.4,5 Electroless deposition is a surface limited reaction that enables the deposition of considerably thin and uniform Cu seed layers with a superior step coverage compared to physical vapor deposition ͑PVD͒ or chemical vapor deposition seed layers. 6,7 Contrary to the conventional method that utilizes a conformal deposition property of electroless Cu, a superfilling of submicrometer features such as trenches or vias using only electroless deposition has also been attempted in several publications. [8][9][10][11][12] The most important factor that determines the feature-filling profiles is the effect of additives. In electrodeposition, a quantitative understanding of superconformal electrodeposition can be described by the curvature enhanced accelerator coverage ͑CEAC͒ mechanism that is derived from the competitive adsorption between additive species that accelerate and inhibit the deposition rate coupled with electrode area change. 13,14 The use of additives in Cu electroless deposition has been largely concerned with stabilizing the electrolyte or enhancing the physical properties of films, while the effect on feature filling has received less attention.In previous work, we have achieved superconformal Cu electroless deposition in the presence of bis-͑3-sulfopropyl͒-disulfide ͑SPS͒ 9,10 and 3-N,N-...

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“…In electroless plating, electrons generated by oxidation of a reducing agent on the catalytic surface reduce metal ions. 5 Once a continuous metal layer is formed, the metal layer itself acts as a catalyst. [6][7][8][9][10] Electroless plating has high potential for use in the metallization process, especially for the formation of a seed layer for electroplating, due to excellent step coverage, simple processing, low resistivity of the deposited film, and no requirement for an external current supply.…”

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confidence: 99%

Ag Seed-Layer Formation by Electroless Plating for Ultra-Large-Scale Integration Interconnection

Koo

Kim

Cho

et al. 2008

J. Electrochem. Soc.

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A high density of Pd catalytic particles is an important factor for obtaining a uniform and continuous Ag seed layer in electroless plating. Adequate surface pretreatment is critical for the formation of such a Pd catalytic particle population. In this study, electroless plating of Ag thin films on TiN substrates was performed using Sn sensitization and Pd activation as pretreatment methods. Sn surface sensitization improves surface wetting and aids in the formation of a Pd catalytic layer in surface-oxidative Pd activation. The Pd activation supported by Sn sensitization also accelerated the formation of a continuous thin Ag film. Furthermore, a thin Ag seed layer deposited on a patterned structure showed excellent conformality. © 2008 The Electrochemical Society. ͓DOI: 10.1149/1.2948365͔ All rights reserved.Manuscript submitted March 26, 2008; revised manuscript received May 29, 2008. Published July 8, 2008 Because chip size has shrunk in ultra-large-scale integration, resistance-capacitance delay has become a critical factor that limits the overall performance of devices.1 Ag is considered to be the ultimate interconnection material in the metallization process of the semiconductor industry due to its very low resistivity, low diffusivity into silicon, and its high resistance against oxidation. 2-4Electroless plating is the autocatalytic process of depositing a metal in the absence of an external source of electric current. In electroless plating, electrons generated by oxidation of a reducing agent on the catalytic surface reduce metal ions.5 Once a continuous metal layer is formed, the metal layer itself acts as a catalyst. [6][7][8][9][10] Electroless plating has high potential for use in the metallization process, especially for the formation of a seed layer for electroplating, due to excellent step coverage, simple processing, low resistivity of the deposited film, and no requirement for an external current supply.11-13 Most work in electroless plating has focused on using this method to form a seed layer for complementary metal oxide semiconductor interconnection. However, there have been few reports about bottom-up filling by Ag electroplating.14,15 Furthermore, no research investigating the use of an electroless plated Ag seed layer for bottom-up filling has been done.In electroless plating, pretreatment steps, where the catalytic particle layer is generated, are very important for obtaining smooth and continuous film morphology. 16 In this study, Pd is adopted as the catalytic material. Pd activation involves the formation of catalytic Pd particles by the reduction of Pd on the substrate surface using electrons generated by the oxidation of the substrate. To obtain a continuously even Ag film, a high density of Pd particles is critical. Sn sensitization is a surface-wetting process that improves the hydrophilic character of various surfaces [17][18][19][20][21][22][23] by the adsorption of colloidal particles a few nanometers in size. In one study, after Sn sensitization, the sample was immersed in a...

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Electroless Deposition Processes: Fundamentals and Applications

Cited by 56 publications

References 139 publications

Synthesis and Patterning of Prussian Blue Nanostructures on Silicon Wafer via Galvanic Displacement Reaction

Synthesis and Patterning of Prussian Blue Nanostructures on Silicon Wafer via Galvanic Displacement Reaction

Effect of 2-Mercapto-5-benzimidazolesulfonic Acid in Superconformal Cu Electroless Deposition

Ag Seed-Layer Formation by Electroless Plating for Ultra-Large-Scale Integration Interconnection

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