Electroless Deposition of Metals and Alloys

Djokić, Stojan S.

doi:10.1007/0-306-47604-5_2

Cited by 79 publications

(82 citation statements)

References 87 publications

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“…The piezoelectric active electrode area was 0.23 cm 2 . Crystal impedance spectra were recorded using a Hewlett Packard HP8751A network analyser, connected to a HP87512A transmission/reflection unit via 50 O coaxial cable such that the centre of the spectrum was near the centre of resonance, f 0 , (10 MHz) with a typical sweep width of 20-200 kHz depending on the interface.…”

Section: Methodsmentioning

confidence: 99%

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Electroless deposition of metallic silver from a choline chloride-based ionic liquid: a study using acoustic impedance spectroscopy, SEM and atomic force microscopy

Abbott

Nandhra

Postlethwaite

et al. 2007

Phys. Chem. Chem. Phys.

114

102

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In this paper, we describe the first example of a sustained galvanic coating deposited on a surface from a non-aqueous liquid. We present the surface characterization of electroless silver deposits on copper substrates from a solution of Ag + ions in an ionic liquid based on a choline chloride (ChCl) eutectic. Through a study of these deposits and the mechanism of formation using acoustic impedance spectroscopy (QCM), probe microscopy (AFM) and electron microscopy (SEM/EDX), we demonstrate that sustained growth of the silver deposit is facilitated by the porous nature of the silver. This is in contrast to the dip-coating reaction of silver ions in aqueous media, where the reaction stops when surface coverage is reached. Electroless silver deposits of up to several microns have been obtained by dip coating in ionic liquids without the use of catalysts of strong inorganic acids.

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Section: Methodsmentioning

confidence: 99%

“…footprint), A P , (here this is 25 mm 2 ). Surface roughness, R, is then expressed as a percentage according to eqn (2).…”

Section: Atomic Force Microscopymentioning

confidence: 99%

Electroless deposition of metallic silver from a choline chloride-based ionic liquid: a study using acoustic impedance spectroscopy, SEM and atomic force microscopy

Abbott

Nandhra

Postlethwaite

et al. 2007

Phys. Chem. Chem. Phys.

114

102

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“…Impurities may significantly affect the rate of many electrochemical reactions 9 including the galvanic displacement. [10][11][12] Additionally, the deposits are quite porous as observed for other galvanic displacement processes. 12,13 In this way the rate of crystal growth is determined by the rate of substrate oxidation (dissolution) which is an anodic process and by the rate of metal ion reduction (deposition) which is a cathodic process.…”

Section: Discussionmentioning

confidence: 77%

Galvanic Processes on Silicon Surfaces in Cu(II) Alkaline Fluoride-Free Solutions

Djokić

Antić

Djokic³

et al. 2016

J. Electrochem. Soc.

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Galvanic processes on silicon surfaces in alkaline fluoride-free solutions containing Cu(II) ions were investigated in this work. Deposition of copper (I) oxide (Cu 2 O) and copper metal at pH 14 onto silicon surfaces at room or elevated temperatures has been demonstrated. This deposition does not require the presence of a reducing agent in the solution. The results clearly show that Cu(II) ions can be reduced to Cu(I) or Cu (0) Metallization of silicon with copper, silver and gold can be realized using electrochemical methods such as electrodeposition or electroless deposition from aqueous solutions. These methods are very attractive since they are simple and relatively easy to scale up. Practical difficulties arise due to the fact that at the surface of silicon wafers, oxide films of SiO 2 are present. SiO 2 films are non-conductive, and consequently, they must be removed prior to direct metallization. Although the metallization of silicon substrates can be achieved via autocatalytic deposition through surface activation with SnCl 2 /PdCl 2 catalysts, 1 this process would not remove the SiO 2 film leading to unacceptable electronic device performance. In order to remove the SiO 2 film and to deposit metals such as copper or silver from aqueous solutions directly onto silicon, pre-treatment steps are required during processing. These pre-treatment steps may involve fluoride-containing solutions, 2 which have deleterious effects on the environment. The direct deposition of copper, silver or gold from aqueous fluoride-containing solutions onto silicon substrates via the galvanic displacement reaction can be quite successful.3-6 According to recent investigations, silver can be successfully deposited onto silicon substrates from fluoride-free aqueous solutions.7 Reports on the deposition of copper onto silicon substrates via the galvanic displacement reaction from fluoride-free aqueous solutions have not been found in the literature. In an attempt to further explore the behavior of silicon in fluoride free solutions without a presence of reducing agents in the aqueous phase, the present communication describes preliminary observations on galvanic reactions on silicon substrates using Cu(II) containing alkaline fluoride-free aqueous solutions.Experimental p-(B doped) and n-(P doped) single crystal (100) silicon wafers were used as substrates in the present work. As received, silicon substrates were very carefully washed with 3:1 (H 2 SO 4 -H 2 O 2 ) solution and then with water and ethanol. After the cleaning procedure, silicon substrates were immersed into respective proprietary fluoridefree solutions containing Cu(II) ions. Immersions were performed at pH 14 using a CuC 4 H 4 O 6 (copper tartrate) complexed solution. The pH of this solution was adjusted with NaOH. The concentration of Cu(II) ions in alkaline solutions was 3.54 g/L. The immersion solutions in the present work were used as prepared. Consequently it should be assumed that O 2 was present in the solutions during the immersion.The specific immersion ...

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“…These powders were synthesized using the formulations for the electroless deposition available in the literature (12,13,16). The conditions for the formation of powders were sought in socalled bath instability (either elevated temperatures, or increased concentrations of the reducing agents).…”

Section: Electroless Depositionmentioning

confidence: 99%

Electrodeposition and Electroless Deposition of Metallic Powders: A Comparison

Djokić¹,

Nikolic

Živković

et al. 2011

ECS Trans.

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Electrodeposition and electroless deposition of metallic powders were comparatively investigated. Electrodeposition of copper is accompanied with the simultaneous hydrogen evolution, which significantly influences the morphology of Cu powder. At lower overpotentials, branched dendrites were produced. At higher overpotentials honeycomb-like deposits of copper were obtained. Formation of silver powders was characterized by the comparison of the exchange and limiting current densities. Instantaneous growth of dendrites starts at low overpotential due to large exchange current density in silver nitrate solution. Formation of powders such as Ni, Co, Ag, Pd and Au from homogenous solutions using an appropriate reducing agent or via galvanic displacement reaction was demonstrated. The hydrolysis of metallic ions is crucial in the deposition metallic powders via electroless deposition from homogenous solutions. Oxides, such as Ag 2 O, Cu 2 O and CuO, suspended in water can successfully be reduced with an appropriate reducing agent, leading to the precipitation of metallic powders.

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Electroless Deposition of Metals and Alloys

Cited by 79 publications

References 87 publications

Electroless deposition of metallic silver from a choline chloride-based ionic liquid: a study using acoustic impedance spectroscopy, SEM and atomic force microscopy

Electroless deposition of metallic silver from a choline chloride-based ionic liquid: a study using acoustic impedance spectroscopy, SEM and atomic force microscopy

Galvanic Processes on Silicon Surfaces in Cu(II) Alkaline Fluoride-Free Solutions

Electrodeposition and Electroless Deposition of Metallic Powders: A Comparison

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