2017
DOI: 10.1016/j.jallcom.2017.09.051
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Electroless Co-P diffusion barrier for n-PbTe thermoelectric material

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Cited by 33 publications
(31 citation statements)
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“…After pretreatment, the substrates were immersed in an 85 °C electroless Co−P plating solution with a pH value of 8.0 for 1 h. The composition of the pretreatment solutions and the plating parameters were adopted from the literature. 18 After plating for 1 h, the thickness of Co−P was ∼3−5 μm, and the amount of P in the film was ∼10 atom %. Solders were reflowed on the n-and p-Bi 2 Te 3 substrates to study the interfacial reactions and to evaluate the stability of the joints in the modules.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…After pretreatment, the substrates were immersed in an 85 °C electroless Co−P plating solution with a pH value of 8.0 for 1 h. The composition of the pretreatment solutions and the plating parameters were adopted from the literature. 18 After plating for 1 h, the thickness of Co−P was ∼3−5 μm, and the amount of P in the film was ∼10 atom %. Solders were reflowed on the n-and p-Bi 2 Te 3 substrates to study the interfacial reactions and to evaluate the stability of the joints in the modules.…”
Section: Methodsmentioning
confidence: 99%
“…The substrates were then dipped into a sensitization and an activation solution. After pretreatment, the substrates were immersed in an 85 °C electroless Co–P plating solution with a pH value of 8.0 for 1 h. The composition of the pretreatment solutions and the plating parameters were adopted from the literature . After plating for 1 h, the thickness of Co–P was ∼3–5 μm, and the amount of P in the film was ∼10 atom %.…”
Section: Methodsmentioning
confidence: 99%
“…The most commonly used thermoelectric materials are bismuth telluride (BiTe), lead telluride (PbTe), antimony, germanium, silver telluride (TAGS), lead-tin telluride (PbSnTe) and silicon germanium (SiGe) [20]. All these materials were used in space missions inside RTGs.…”
Section: ④ Thermoelectric Materialsmentioning
confidence: 99%
“…Both methods require high operation temperature and may induce severe inter-diffusion. Alternatively, a solid-liquid interdiffusion provides a low-temperature bonding, through the incorporation of low-melting-point interlayers, such as the Sn or In [41][42][43]. Those interlayers (Sn or In) are consumed by the metal layers (such as Ag), resulting in the high-melting-point IMCs (such as Ag 3 Sn and Ag 3 In), which might enhance the bonding strength.…”
Section: Bonding In Pbte-based Modulesmentioning
confidence: 99%
“…PbTe) and the electrodes, to prevent the severe inter-diffusion. Figure 2(a)-(d) interpret the inter-diffusion of n-type PbTe/Cu and n-type PbTe/Ni couples [43], where the diffusion barrier layer (e.g. Co-P) is introduced or not.…”
Section: Bonding In Pbte-based Modulesmentioning
confidence: 99%