Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

Kim, Woohyun; Yoo, Chanyoung; Park, Eui-Sang; Ha, Manick; Jeon, Jeong Woo; Kim, Gil Seop; Woo, Kyung Seok; Lee, Yoon Kyeung; Hwang, Cheol Seong

doi:10.1021/acsami.9b10891

Cited by 14 publications

(15 citation statements)

References 52 publications

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“…GeSe is a member of group-VI monochalcogenides (SnS, SnSe, GeS and GeSe), known as phosphorene analogues. [35][36][37][38] Recently, GeSe has been widely investigated in photodetectors, [39][40][41][42][43][44][45][46] ovonic threshold switching devices, [47][48][49][50] PEC water splitting, 51 gas sensors, 52 field effect transistors (FETs) [53][54][55] and photovoltaics. 33,56,57 Among these applications, GeSe displays great potential in the field of photovoltaics due to its excellent material, optical and electrical properties.…”

Section: Properties Of Gesementioning

confidence: 99%

GeSe thin-film solar cells

Liu

Yang

et al. 2020

Mater. Chem. Front.

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Section: Properties Of Gesementioning

confidence: 99%

GeSe thin-film solar cells

Liu

Yang

et al. 2020

Mater. Chem. Front.

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“…To date, GeSe is regarded as one of the best OTS materials with low OFF‐state current ( I OFF ), fast speed, high endurance, and simple composition 49–52 . Amorphous GeSe has relatively large band gap in experiment (~1.0 eV), 51 so the MGS are easy to identify even though the DFT calculation underestimates the band gap.…”

Section: Resultsmentioning

confidence: 99%

“…To date, GeSe is regarded as one of the best OTS materials with low OFF-state current (I OFF ), fast speed, high endurance, and simple composition. [49][50][51][52] Amorphous GeSe has relatively large band gap in experiment (~1.0 eV), 51 so the MGS are easy to identify even though the DFT calculation underestimates the band gap. Meanwhile, GeSe is likely to form large atomic distortions and induce sufficient defect states, and hence, it is selected as the prototype to study the OTS materials.…”

Section: Analyzing Mgs Using Conventional Toolsmentioning

confidence: 99%

Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration

Miao

2022

InfoMat

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The recent development of three-dimensional semiconductor integration technology demands a key component-the ovonic threshold switching (OTS) selector to suppress the current leakage in the high-density memory chips. Yet, the unsatisfactory performance of existing OTS materials becomes the bottleneck of the industrial advancement. The sluggish development of OTS materials, which are usually made from chalcogenide glass, should be largely attributed to the insufficient understanding of the electronic structure in these materials, despite of intensive research in the past decade. Due to the heavy first-principles computation on disordered systems, a universal theory to explain the origin of mid-gap states (MGS), which are the key feature leading to the OTS behavior, is still lacking. To avoid the formidable computational tasks, we adopt machine learning method to understand and predict MGS in typical OTS materials. We build hundreds of chalcogenide glass models and collect major structural features from both short-range order (SRO) and medium-range order (MRO) of the amorphous cells. After training the artificial neural network using these features, the accuracy has reached ~95% when it recognizes MGS in new glass. By analyzing the synaptic weights of the input structural features, we discover that the bonding and coordination environments from SRO and particularly MRO are closely related to MGS. The trained model could be used in many other OTS chalcogenides after minor modification. The intelligent machine learning allows us to understand the OTS mechanism from vast amount of structural data without heavy computational tasks, providing a new strategy to design functional amorphous materials from first principles.

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“…Prominent examples are selfassembled heterostructures consisting of separated ionic/ electronic channels, 13 the artificially stacked Ta/Ta 2 O 5 :Ag/ Ru structure which is operated at low currents and voltages, 14 and the vertically aligned SrTiO 3 −Sm 2 O 3 nanoscaffolds containing spatially confined oxygen vacancies which function as conduction channels at vertical interfaces. 15 However, the hitherto-reported active layers of electroforming-free RS memory devices are limited to laterally or vertically aligned heterojunctions, deficient-abundant monolayer compounds, 16 or deliberately stacked multilayers. 17 In this work, for the first time, we explore the concept of spinodal decomposition to introduce a biphasic system with fully coherent lattice, overall chemical uniformity, and conduction-differentiated regions, to be against the longstanding stability and reliability issues of RS memory devices.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Prominent examples are self-assembled heterostructures consisting of separated ionic/electronic channels, the artificially stacked Ta/Ta 2 O 5 :Ag/Ru structure which is operated at low currents and voltages, and the vertically aligned SrTiO 3 –Sm 2 O 3 nanoscaffolds containing spatially confined oxygen vacancies which function as conduction channels at vertical interfaces . However, the hitherto-reported active layers of electroforming-free RS memory devices are limited to laterally or vertically aligned heterojunctions, deficient-abundant monolayer compounds, or deliberately stacked multilayers …”

Section: Introductionmentioning

confidence: 99%

Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides

Liu

Cao

Zhu

et al. 2021

ACS Appl. Mater. Interfaces

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Common pursuits of developing nanometric logic and neuromorphic applications have motivated intensive research studies into low-dimensional resistive random-access memory (RRAM) materials. However, fabricating resistive switching medium with inherent stability and homogeneity still remains a bottleneck. Herein, we report a self-assembled uniform biphasic system, comprising low-resistance 3 nm-wide (Bi 0.4 ,La 0.6 )FeO 3−δ nanosheets coherently embedded in a high-resistance (Bi 0.2 ,La 0.8 )FeO 3−δ matrix, which were spinodally decomposed from an overall stoichiometry of the (Bi 0.24 ,La 0.76 )FeO 3−δ parent phase, as a promising nanocomposite to be a stable and endurable RRAM medium. The Bi-rich nanosheets accommodating high concentration of oxygen vacancies as corroborated by X-ray photoelectron spectroscopy and electron energy loss spectroscopy function as fast carrier channels, thus enabling an intrinsic electroforming-free character. Surficial electrical state and resistive switching properties are investigated using multimodal scanning probe microscopy techniques and macroscopic I−V measurements, showing high on/off ratio (∼10 3 ) and good endurance (up to 1.6 × 10 4 cycles). The established spinodal decomposition-driven phase-coexistence BLFO system demonstrates the merits of stability, uniformity, and endurability, which is promising for further application in RRAM devices.

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Electroforming-Free Bipolar Resistive Switching in GeSe Thin Films with a Ti-Containing Electrode

Cited by 14 publications

References 52 publications

GeSe thin-film solar cells

GeSe thin-film solar cells

Deep machine learning unravels the structural origin of mid‐gap states in chalcogenide glass for high‐density memory integration

Spinodal Decomposition-Driven Endurable Resistive Switching in Perovskite Oxides

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