“…Zinc telluride (ZnTe) is a relatively high mobility p-type semiconductor (∼100 cm 2 V -1 s -1 for single-crystal material) with a direct band gap of ∼2.25 eV, , which has been considered for use in light-emitting diode, detector, photovoltaic, − and transistor applications. Copper-doped zinc telluride has been pursued, for example, as a potentially environmentally stable, low-resistance back-contact for CdS/CdTe solar cells. , Thin films of ZnTe are generally deposited using processes such as molecular beam epitaxy (MBE), , thermal evaporation, ,,, electrodeposition, ,, and metal−organic vapor-phase epitaxy (MOVPE). , However, these approaches are not amenable to low-cost, large-area, high-throughput deposition. Some examples of techniques that fit these processing criteria include spin-coating, stamping, and printing, which, however, all require a soluble semiconductor or a soluble precursor that can be cleanly decomposed to the desired semiconductor at low temperature.…”